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Articles by keyword: «RHEED»

• In Situ Simulation by RHEED and Photoemission of GaAs (001) β₂(2x4) Reconstructed Surface
  Published in: Diffusion in Solids and Liquids VI (p132)
• 3C-SiC Pseudosubstrates for the Growth of Cubic GaN
  Published in: Silicon Carbide and Related Materials - 1999 (p1467)
• An Accurate Method to Determine the Growth Conditions during Molecular Beam Epitaxy of Cubic GaN
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p1173)
• Carbonization Induced Change of Polarity for MBE Grown 3C-SiC/Si(111)
  Published in: Silicon Carbide and Related Materials 2000 (p179)
• Critical Thickness Determination of II-VI Semiconductors by Rheed and X-Ray Diffraction
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p147)
• Defect Observation in Silicon Surface Layers by Surface Wave Resonance in RHEED
  Published in: Shallow Impurities in Semiconductors V (p273)
• Effect of Mn Thickness on the Mn-Ge Phase Formation during Reactions of 50 nm and 210 nm Thick Mn Films Deposited on Ge (111) Substrate
  Published in: Diffusion in Materials - DIMAT 2011 (p439)
• Fabrication of α-SiC Heteroepitaxial Films by YAG-PLAD Method
  Published in: Silicon Carbide and Related Materials 2001 (p371)
• Growth Behavior of Epitaxial MgO Films on Si(001) by Pulsed Laser Deposition
  Published in: Ceramic Interfaces: Properties and Applications V (p119)
• Growth Mechanism of SrTiO₃ Thin Film on CeO₂(001) Surface
  Published in: Asian Ceramic Science for Electronics II and Electroceramics in Japan V (p137)
• Growth of CdS Layers by Hot-Wall Beam Epitaxy and their Application as Quasi-Substrates for Molecular Beam Epitaxy of Wurtzite CdS_1-xSe_x
  Published in: II-VI Compounds and Semimagnetic Semiconductors (p415)
• Growth of SiC Hetero-Epitaxial Films by Pulsed-Laser Deposition -Laser Frequency Dependence-
  Published in: Silicon Carbide and Related Materials - 2002 (p217)
• Growth of SiC Layers on (111) Si by Solid Source Molecular Beam Epitaxy
  Published in: Silicon Carbide, III-Nitrides and Related Materials (p251)
• Growth of SiC on 6H-SiC {01-14} Substrates by Gas Source Molecular Beam Epitaxy
  Published in: Silicon Carbide and Related Materials - 1999 (p201)
• Growth, Structure and Interfaces of Cu and Cu/Ti Thin Films on (0001) α-Al₂O₃
  Published in: Intergranular and Interphase Boundaries in Materials (p217)