Papers by Keyword: Saturation Voltage

Abstract: A 3300V/50A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 4300V, the saturation voltage is between 3.4V and 3.7V and the threshold voltage is between 5.2V and 6.5V, which are similar with the simulation results.

Abstract: A 1700V/100A NPT-IGBT was designed by process simulation, which had an internal transparent collector and a planner cell structure. The Static characteristics were studied. The simulation results show that the threshold voltage of the device can be adjusted by changing the injection dose or the drive-in time of the p-well. The saturation voltage of the device can be adjusted by changing injection dose of the p-well or the internal transparent collector. This device was fabricated using a self-aligned process, the test results show that the breakdown voltage is more than 2100V, the saturation voltage is between 2.5V and 2.7V and the threshold voltage is between 3.9V and 5.9V, which are similar with the simulation results.

Abstract: Numerical simulations have been performed to investigate the effect of the temperature on the electronic transport through a small group of molecular assembly system (MAS). The model involves two 1,4-dithiolbenzene (DTB) molecular units stacked in one dimension (1D). The currentvoltage (I-V) and the conductance voltage (G-V) analysis are presented under the influence of the temperature associated with the π-orbital coupling interactions controlled by the intermolecular spacing d. The MAS with reduced d affects significantly the conductance which results in reducing the conductance gap and the saturation voltage V_sat. In addition, the present results show that the temperature rise effect plays an important role in determining the current flow in the saturation region. In this region, it is important to note that V_sat increases linearly when T goes from 50 to 325 K_.. To conclude, V_sat can be controlled either by changing the temperature or modifying its intermolecular spacing conformation.

Abstract: Vertical epitaxial NPN SiC BJTs for 1200 V rating were fabricated. Very low collector-emitter saturation voltages VCESAT=0.5 V at IC=6 A (JC=140 A/cm2) and T=25 °C and VCESAT=1.0 V at IC=6 A and T=250 °C were measured. The common emitter current gain at IC=6 A is 71 at T=25 °C and 32 at T=250 °C, respectively. A SPICE model was developed for the BJT including the parasitic capacitances of the internal pn junctions, as well as temperature dependence of the current gain and the collector series resistance. The IC-VCE characteristics of the BJT are in good agreement with the SPICE model between 25 °C and 250 °C. Fast switching measurements were performed showing a VCE voltage fall-time of 22 ns and a VCE voltage rise-time of 11 ns.

Abstract: This paper reports large active area (15 mm2) 4H-SiC BJTs with a low VCESAT=0.6 V at IC=20 A (JC=133 A/cm2) and an open-base breakdown voltage BVCEO=2.3 kV at T=25 °C. The corresponding room temperature specific on-resistance RSP-ON=4.5 mΩcm2 is to the authors knowledge the lowest reported value for a large area SiC BJT blocking more than 2 kV. The on-state and blocking characteristics were analyzed by device simulation and found to be in good agreement with measurements. Fast switching with VCE rise- and fall-times in the range of 20-30 ns was demonstrated for a 6 A 1200 V rated SiC BJT. It was concluded that high dynamic base currents are essential for fast switching to charge the BJT parasitic base-collector capacitance. In addition, 10 μs short-circuit capability with VCE=800 V was shown for the 1200 V BJT.