Papers by Keyword: Semiconducting Silicon

Abstract: Over 80% of solar grade silicon is produced by using Siemens process. The chemical and physical phenomenon involved in the Siemens CVD reactors is very complex. For the purpose of finding the effect of gas phase reactions on the deposition rate of silicon in Siemens CVD reactors, four different gas phase reaction routes were applied in computational simulations using a commercial software Ansys Fluent. The simulation results show that the gas phase reaction mechanisms have great impact on the predicted Si growth rates. Specifically, the silicon growth rates decrease with an increase in HCl concentration on the rods’ surfaces with a fixed surface temperature. The formation of SiCl₄, however, shows insignificant impacts on the growth rate of Si, and the surface concentration of SiCl₄ is not directly associated with that of HCl.

Abstract: Boron-doped (B-doped) silicon nanowires (SiNWS) have been prepared and characterized by Raman scattering and photoluminescence (PL). B-doped SiNWS were grown by plasma enhanced chemical vapor deposition (PECVD), using diborane (B2H6) as the dopant gas. Raman spectra show a band at 480cm-1,which is attributed to amorphous silicon. Photoluminescence at room temperature exhibits three distinct emission peaks at 1.34ev,1.42ev,1.47ev. Possible reason for these is suggested. PACS: 36.40._c; 81.15.Gh; 81.20._n