Papers by Keyword: Shallow Donors

Abstract: We report a detailed study of electron longitudinal and transverse spin relaxation times for Li donors in monoisotopic ²⁸Si over the temperature range 4–20 K using continuous wave and pulsed electron paramagnetic resonance. Comparison of the obtained spin-lattice relaxation times for the states of the isolated donor center and lithium complex LiO showed that due to the presence of orbital degeneracy, relaxation is faster for single lithium than for the LiO complexes with the nondegenerate ground state. For the isolated lithium center in silicon the relaxation is well described by Blume-Orbach process, with the parameters of the spin-orbit coupling ~ 1·10^-6 meV compare to Orbach process for LiO complex with spin-orbit coupling parameter ~ 1.5·10^-2 meV.

Abstract: We discuss the results of electrically detected magnetic resonance (EDMR) spectroscopy on SiC-SiO₂ interfaces interacting with hydrogen and nitrogen. Using EDMR, three types of 4H-SiC MOSFETs, which were prepared by dry oxidation (“Dry” sample), post hydrogen anneal (“Hydrogen” sample), and post nitridation anneal (“Nitrogen” sample), were examined in the temperature range of 4–300 K. These samples revealed several different results from the earlier ESR (electron spin resonance) and EDMR studies on SiC-SiO₂ interfaces. The most significant finding was the high-density doping of nitrogen into the channel region after the post nitridation anneal. The incorporated nitrogen donors were observed as the “Nh” EDMR signal at 4–20 K. Roles of these nitrogen donors are discussed in correlation with the electrical properties of SiC MOSFETs.

Abstract: A new investigation on the optical properties of the phosphorus-bound excitons is presented. Arguments are given in favor of the possibility of degenerate donor state for phosphorus substituting Si atom on hexagonal site. On the base of a simple model, it is shown that the experimental spectra also provide evidence in favor of this possibility. The possibility for violation of the Haynes rule in the case of phosphorus donors on the two inequivalent sites is indicated.

Abstract: The conclusion which is drawn from the EPR line broadening and narrowing of the N shallow donor in an isotope enriched and non-enriched 4H-SiC and 6H-SiC crystals along with previous ENDOR results shows that the spin-density distribution over the C and Si nuclei differs between the 4H-SiC and 6H-SiC polytypes. The main part of the spin density in 4H-SiC is located on the Si sublattice. In contrast, in 6H-SiC the main part of the spin density is located on the C sublattice. An explanation for the difference in the electronic wave function of the N donor in 4HSiC and 6H-SiC can be found in the large difference in the band structure of two polytypes and in the position of the minima in the Brillouin zone.