Papers by Keyword: Sheet Resistivity

Abstract: Metal oxide thin films are widely used for energy saving glass coating. This coating has the ability of blocking the infrared signal while being transparent to other visible part of the spectrum. However, there is one critical disadvantage of this metal oxide coating which it attenuates useful radio frequency and microwave signal such as GSM mobile signal, personal communication, GPS signal through them. These important microwave signals are fall within the range of 800 MHz to 2200 MHz. Frequency selective structure has been applied to solve the attenuation of microwave signal. With the adding of frequency selective structure, it can bring huge improvement of the transmission loss through it. Computer simulation using CST software is used to investigate the transmission loss through the metal oxide coated glass. The frequency selective structure will be etched out from the metallic oxide coated on the glass. Results showed that different shape of the structure will have different peak transmission loss through the glass. When cross dipole and circle shape been simulated using CST software, it can clearly see that the transmission lost and peak frequency had changed drastically. Then, triangle and pentagon shape also have different transmission through it. In addition, conductivity and electrical properties of coated metal oxide thin film is also very important. The transmission through the different ohmic sheet resistance of metal oxide thin film was also investigated. The sheet resistance value was obtained from the reported experimental results. Simulated results showed that full width half maximum, maximum transmission loss and peak frequency loss was very much dependent on the metal oxide sheet resistance. Therefore, the control of the thickness and oxygen content in metal oxide thin film are very much important to optimize the transmission loss through it for energy saving glass applications.

Abstract: The increasing fresh water deficiency due to environmental pollution demands accurate, reliable and highly sensitive sensors for online monitoring of water pollution. Solid state sensors are helpful for fabricating and implementing low cost wireless sensors for monitoring of pollution. In water pollution determination, the measurement of pH plays an important role. Among the semiconductor sensitive materials RuO₂ shows good sensitivity to hydrogen ions, high accuracy and resistance to interferences caused by other dissolved ions. In this work, thick film RuO₂ based pH sensitive electrodes are fabricated by screen printing. The sensors were characterized by electromotive force measurements, SEM, optical microscopy and EDS analysis. The effects of sheet resistivity of the material and storage conditions are discussed. The sensor exhibits a sensitivity of 60 mV/pH in wide pH range of 2 to 10. The obtained response was very close to the theoretical Nernstian behavior. The best performance was attained for a sensor fabricated from 10 kΩ/sq. thick film paste and stored at water for 25 days.

Abstract: Recently, energy saving glass is commonly applied in the modern engineered building. This is due to its advantages of keeping the heat inside the building in winter while rejecting the heat when in summer. The typical energy saving glass is made by applying a very thin metallic oxide such as silver oxide or tin oxide on one side of the float glass. But at the same time, it has the disadvantages of attenuates useful microwave frequencies that ranging from 0.8 2.2 GHz. The examples of the microwave frequency at this range are GSM mobile signal, GPS and personal communication. Frequency selective surface (FSS) has been introduced to overcome this drawback of energy saving glass. In this study, the transmission of the microwave signal is observed through the simulation using Computer Simulation Technology Microwave Studio. Bandpass frequency selective surface of cross dipole shape is used for the simulation. In the simulation, conductivity and electrical properties of glass and metal oxide thin film are important. The microwave transmission was evaluated at various sheet resistance of metal oxide thin film. The results show that the minimum transmission lost increased with the ohmic resistance increased. On the other hand, the peak frequency at various sheet resistance shows constant value at around 1.25-1.30 GHz. The full width half maximum of the microwave transmission increases with the sheet resistance value. The results suggest that FSS structured metal oxide thin film with lowest sheet resistance transmits more signal in the range for GSM phone signal.

Abstract: A new continuous diffusion furnace is introduced in this paper and its workflow is briefly discussed. Within the analysis and statement about the diffusion principle, both junction depth and sheet resistivity are studied. Numerical analysis has been performed to simulate the temperature distribution in the furnace, with FLUENT software. Finally the values of sheet resistivity are calculated according to both temperature field models of continuous and traditional diffusion furnace respectively. Therefore, the new continuous diffusion furnace is proved to be feasible by the comparison of these values.

Abstract: Printing electronics technology promotes the application of conductive ink. In this paper, the manufacture of nano-sliver conductive ink is investigated. First, Spherical silver nano-particles were reduced from silver nitrate solution by liquid chemical reduction method, with hydrazine hydrate as reductant and PVP as surface-protection reagent. SEM was used to characterize the morphology of silver powders, and the mean particles size is 62.79 nm. Then, conductive ink was prepared with nano-silver particles made in this research as conductive fillers, polyurethane resin and acrylic resin as binders, and stearic acid as dispersant. In the last, the conductive ink was printed on the PCB substrate by screening printing. After the ink is dried, conductivity, abrasion resistance, and adhesion were tested. The experiment results shows that the order of sheet resistivity magnitude is 10-4Ω•m, the number of rubbing fastness is more than 6000, and the adhesion can be resisted repeatedly to tape tear.

Abstract: This paper reports the effect of deposition temperature on the deposition rate, residual stress, and resistivity of in-situ nitrogen-doped (N-doped) polycrystalline 3C-SiC (poly-SiC) films deposited by low pressure chemical vapor deposition (LPCVD). N-doped poly-SiC films were deposited in a high-throughput, resistively-heated, horizontal LPCVD furnace capable of holding up to 150 mm-diameter substrates using SiH2Cl2 (100%) and C2H2 (5% in H2) precursors, with NH3 (5% in H2) as the doping gas. The deposition rate increased, while the residual stress decreased significantly as the deposition temperature increased from 825oC to 900°C. The resistivity of the films decreased significantly from 825°C to 850°C. Above 850°C, although the resistivity still decreased, the change was much smaller than at lower temperatures. XRD patterns indicated a polycrystalline (111) 3C-SiC texture for all films deposited in the temperature range studied. SIMS depth profiles indicated a constant nitrogen atom concentration of 2.6×1020/cm3 in the intentionally doped films deposited at 900°C. The nitrogen concentration of unintentionally doped films (i.e., when NH3 gas flow was zero) deposited at 900°C was on the order of 1017/cm3. The doped films deposited at 900°C exhibited a resistivity of 0.02
-cm and a tensile residual stress of 59 MPa, making them very suitable for use as a mechanical material supporting microelectromechanical systems (MEMS) device development.