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Papers by Keyword: Si-SiO₂

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Point Defects Interaction with Extended Defects and Impurities and Its Influence on the Si-SiO₂ System Properties

Authors: Daniel Kropman, U. Abru, Tiit Kärner, U. Ugaste, E. Mellikov, M. Kauk, Ivo Heinmaa, A. Samoson, Arthur Medvid

Abstract: The type and density of the point defects that are generated in the Si surface layer during thermal oxidation depend on the oxidation condition: temperature, cooling rate, oxidation time, impurity content. The interaction between point defects with extended defects and impurities affect the Si-SiO2 interface properties. The influence of point defects may be diminished and the interface properties improved by an appropriate choice of oxidation conditions.

333

Interaction of Point Defects with Extended Defects in the Si-SiO₂ System during its Formation Process

Authors: Daniel Kropman, Tiit Kärner, U. Abru, M. Strik, Ü. Ugaste, E. Mellikov

1737

Impurity Gettering Investigation in the Si-SiO₂ System

Authors: Daniel Kropman, V. Poll, L. Tambek, Tiit Kärner, U. Abru, M. Strik

267

Manufacture and Characterization of Nanocomposite Thin Films of Si-SiO₂ and Ag-Si

Authors: I.T.H. Chang, F. Niu, D. Slimovici, C. Wildig, P.A. Leigh, P.J. Dobson, Brian Cantor

175

Papers by Keyword: Si-SiO2

Papers by Keyword: Si-SiO₂