Papers by Keyword: SiC Crystal Growth

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The Role of Porous Graphite Plate for High Quality SiC Crystal Growth by PVT Method
Authors: Hee Won Shin, Hee Jun Lee, Hwang Ju Kim, Dong Hoon Lee, Mi Seon Park, Yeon Suk Jang, Won Jae Lee, Im Gyu Yeo, Myong Chuel Chun, Si Hyun Lee, Jung Gon Kim
Abstract: The present research is focused to investigate a role of the porous graphite (PG) plate that could improve the quality of 4H-SiC crystal. The grown crystal in porous graphite inserted crucible showed the lower intensity of Al, B and Ti impurity concentration than SiC crystal grown in conventional crucible. The porous graphite plate before and after the growth process has been investigated by a Raman spectroscopy and a photoluminescence spectrum (PL). According to the analysis result, it was confirmed that the porous graphite plate had the effect of suppressing impurities supplied to SiC single crystal during the growth process.
113
Flux Growth of SiC Crystals from Eutectic Melt SiC-B4C
Authors: Boris M. Epelbaum, P.A. Gurzhiyants, Z.G. Herro, Matthias Bickermann, Albrecht Winnacker
119
Free Growth of 4H-SiC by Sublimation Method
Authors: Jean Marc Dedulle, Mikhail Anikin, Michel Pons, Elisabeth Blanquet, Alexander Pisch, Roland Madar, Claude Bernard
71
Defect Reduction in SiC Crystals Grown by the Modified Lely Method
Authors: Mikhail Anikin, Michel Pons, Etienne Pernot, Roland Madar
83
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