Papers by Keyword: SiOC

Abstract: In our study, the dielectric properties of SiOC low k thin film derived from polyphenylcarbosilane were investigated as a potential interlayer dielectrics for Cu interconnect technology. A SiOC low k thin film was fabricated onto a n-type silicon wafer by dip coating using 30wt % polyphenylcarbosilane in cyclohexane. Curing of the film was performed in air at 300°C for 2h. The thickness of the film ranges from 1 μm to 1.7 μm. The dielectric constant was determined from the capacitance data obtained from metal/polyphenylcarbosilane/conductive Si MIM capacitors and shows a dielectric constant as low as 3.26 without porosity added. The SiOC low k thin film derived from polyphenylcarbosilane shows promising application as an interlayer dielectrics for Cu interconnect technology.

Abstract: New ceramic composites that consist of the amorphous SiOC matrix having dispersoids of Mo4.8Si3C0.6 and some MoSi2 were synthesized, and their oxidation characteristics were investigated between 450 and 1050oC in air. The SiOC matrix was obtained by converting polymethylsiloxane via pyrolysis. The good oxidation resistance of the prepared composites originated from a thin, protective SiO2 layer formed on the surface. But the outermost oxide surface was porous, owing to the formation of the highly volatile MoO3, which was formed together with SiO2.