| Paper Title | Page |
|---|---|
|
Analysis of SiC Islands Formation during First Steps of Si Carbonization Process Authors: David Méndez, A. Aouni, Daniel Araújo, Etienne Bustarret, Gabriel Ferro, Yves Monteil |
555 |
|
Comparative TEM Investigation of MBE and RTCVD Conversion of Si into SiC Authors: Francisco M. Morales, S.I. Molina, Daniel Araújo, Volker Cimalla, Jörg Pezoldt |
285 |
|
Interfacial Strain and Defects in Si (001) Carbonization Layers for 3C-SiC Hetero-Epitaxy Authors: Etienne Bustarret, Daniel Araújo, David Méndez, Francisco M. Morales, F.J. Pacheco, S.I. Molina, Névine Rochat, Gabriel Ferro, Yves Monteil |
277 |
|
Planar Defects, Voids and their Relationship in 3C-SiC Layers Authors: David Méndez, A. Aouni, Daniel Araújo, Gabriel Ferro, Yves Monteil, Etienne Bustarret |
189 |
|
Structural Study of GaN Layers Grown on Carbonized Si(111) Substrates Authors: Francisco M. Morales, A. Ponce, S.I. Molina, Daniel Araújo, R. García, J. Ristic, M.-A. Sánchez-García, Enrique Calleja, Volker Cimalla, Jörg Pezoldt |
1003 |