Papers by Keyword: Silicon-Based Light Emission

Abstract: In this article we will give an overview of our work devoted to Si-based light emission which was done in the last years. Si-based light emitters were fabricated by ion implantation of rare earth elements into the oxide layer of a conventional MOS structure. Efficient electroluminescence was obtained for the wavelength range from UV to the visible by using a transparent top electrode made of indium-tin oxide. In the case of Tb-implantation the best devices reach an external quantum efficiency of 16 % which corresponds to a power efficiency in the order of 0.3 %. The properties of the microstructure, the IV characteristics and the electroluminescence spectra were evaluated. The electroluminescence was found to be caused by hot electron impact excitation of rare earth ions, and the electric phenomena of charge transport, luminescence centre excitation, quenching and degradation are explained in detail.

Abstract: Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.