Papers by Keyword: Silicon Laser

Abstract: Silicon crystals, doped with moderate concentration of magnesium or lithium, have been grown for application as optically pumped donor silicon lasers for the terahertz spectral region. The pedestal growth technique accompanied with axial-loaded dopant pills enabled manufacturing of large silicon crystals with a homogeneous donor distribution in the range from 1014 to 1016 cm-3, as required for intracenter silicon lasers. Terahertz-range photoluminescence from the grown crystals has been observed.

Abstract: The performance of optically pumped terahertz silicon lasers with active media made from mono- and polycrystalline silicon doped by phosphorus has been investigated. The polycrystalline silicon samples consist of grains with a characteristic size distribution in the range from 50 to 500 m. Despite of significant changes of the principal phonon spectrum and increased scattering of phonons at grain boundaries, the silicon laser made from polycrystalline material has a laser threshold and an operation temperature only slightly worse than that of monocrystalline silicon lasers.