| Paper Title | Page |
|---|---|
|
Aluminum Implantation in 4H-SiC: Physical and Electrical Properties Authors: Jean François Michaud, X. Song, J. Biscarrat, F. Cayrel, E. Collard, D. Alquier |
581 |
|
Authors: G. Pope, Owen J. Guy, Philip A. Mawby |
833 |
|
Electrical Characterization of Nitrogen Implanted 3C-SiC by SSRM and CĀTLM Measurements Authors: Xi Song, Anne Elisabeth Bazin, Jean François Michaud, Frédéric Cayrel, Marcin Zielinski, Marc Portail, Thierry Chassagne, Emmanuel Collard, Daniel Alquier |
193 |
|
Electrical Characterization of p-Type 6H-SiC Layers Created by C and Al Co-implantation Authors: Kiyoshi Tone, S.R. Weiner, Jian H. Zhao |
689 |
|
Electrical Properties of Graphite/p-Type Homoepitaxial Diamond Contact Authors: Yigang Chen, Mitsuru Hasegawa, S. Yamanaka, Hideyo Okushi, Naoto Kobayashi |
945 |
|
Formation of Large Area Al Contacts on 6H- and 4H-SiC Substrates Authors: Oleg Korolkov, Toomas Rang |
603 |
|
Low Resistance Ohmic Contacts to n-SiC Using Niobium Authors: T.N. Oder, John R. Williams, K.W. Bryant, M.J. Bozack, John Crofton |
997 |
|
Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates Authors: Anne Elisabeth Bazin, Thierry Chassagne, Jean François Michaud, André Leycuras, Marc Portail, Marcin Zielinski, Emmanuel Collard, Daniel Alquier |
721 |
|
Micro- and Nano-Scale Electrical Characterization of Epitaxial Graphene on Off-Axis 4H-SiC (0001) Authors: Filippo Giannazzo, Corrado Bongiorno, Salvatore Di Franco, Emanuele Rimini, Vito Raineri |
637 |
|
Nano-Electro-Structural Evolution of Ni-Si Ohmic Contacts to 3C-SiC Authors: Jens Eriksson, Fabrizio Roccaforte, Filippo Giannazzo, Raffaella Lo Nigro, Giuseppe Moschetti, Vito Raineri, Jean Lorenzzi, Gabriel Ferro |
569 |