Papers by Keyword: Spin-Polarized Transport

Abstract: Based on the phase time definition,we study theoretically the transmission coefficients and the spin-tunneling time in parabolic-well magnetic tunneling junction with a tunnel barrier in the presence of Rashba spin-orbit interaction. The significant quantum size, quantum coherence, and Rashba spin-orbit interaction are considered simultaneously. It is found that the tunneling time strongly depends on the spin orientation of tunneling electrons. We also find that as the length of the semiconductor increases, the spin tunneling time shows curved increase. It exhibits useful instructions for the design of spin electronic devices.

Abstract: The work is devoted to the discussion of magnetic dynamics features in mesoscopic magnetic structures under the action of spin transport and spin-torque transfer in the nanopillar structures. Tunneling magnetic structure consisting of autoemission cathode and patterned magnetic anode is considered. Main bifurcation changes in the states of a dynamical system, that models mesoscopic structure, are discussed for varied spin polarized current and an external magnetic field.

Abstract: Transport properties of systems based on diluted magnetic semiconductors (Ga,Mn)As are investigated theoretically by means of the Kubo linear response theory. The underlying electronic structure is obtained within the local spin-density approximation using the scalarrelativistic tight-binding linear muffin-tin orbital (TB-LMTO) method. The effect of substitutional randomness on the electronic structure and on the transport properties is systematically described in the coherent potential approximation (CPA). The quantities studied include the residual resistivities of the bulk alloys as well as conductances of epitaxial trilayers Cr/(Ga,Mn)As/Cr (001) in the current-perpendicular-to-plane (CPP) orientation. The results witness that various compensating defects such as As antisite atoms and Mn interstitials have much stronger detrimental effect on the spin polarization of the CPP conductances as compared to their influence on the spin polarization of the bulk conductivities.

Abstract: The spin transport in a lateral spin-injection device with an FeCo/Si/FeCo junction has been investigated. Magnetoresistance (MR) signals were found to appear at low magnetic fields in the range 4 – 300 K. This is attributable to the switching of the magnetization of the two ferromagnetic contacts in the device for certain magnetic fields over which the magnetization in one contact is aligned antiparallel to that in the other. Our results suggest that the spin-polarized electrons are injected from the first contact and, after propagating through the bulk Si, are collected by the second contact.