Papers by Keyword: Trajectory Density

Abstract: The polishing pad plays a significant role in the Chemical Mechanical Polishing (CMP) process and its wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is introduced and the law of pad wear along the pad radius is discussed, thus a new FAP with optimized pattern is designed and prepared in order. The flatness of the wafer lapped with a uniform pattern pad and that with an optimized pattern was compared. Results show that the PV value of the latter is lower that of the former.

Abstract: The polishing pad’s wear influences the surface accuracy of the polished wafer. A new polishing pad wear model is established using the idea of Finite Element Analysis (FEA) and the effect of polishing parameters on the wear of polishing pad is discussed.