Papers by Keyword: Varistors

Abstract: The nonlinear electrical properties of TiO2-based varistor doped with 0.25mol% Ta2O5 and different contents of Sc2O3 were investigated. It was found that the TiO2 varistor ceramic doped with 0.10mol% Sc2O3 exhibited an optimal nonlinear coefficient of 7.8, a breakdown electrical field of 16.0V/mm, and relative dielectric constant of 1.27 × 105 (measured at 1 kHz). In order to analyze the effect of Sc2O3 on TiO2 varistors, studies were made on the capacitance versus voltage characteristics. A Schottky-type barrier, which is assumed as the origin of varistor behavior, was inferred from the C-V measurement. The barrier height and donor concentration were obtained as 0.41eV and 1.21 × 1026cm-3, respectively, for sample doped with 0.10mol% Sc2O3. Analogized to the ZnO varistors, the formation mechanism of Schottky-type barrier was discussed in this paper by the theory of defect in crystal lattice.

Abstract: Dopants such as Ta2O5 play a major role in the formation of barriers at the grain boundary in TiO2 varistors, increasing their nonlinear coefficient and decreasing their breakdown electric field. This paper discusses the microstructural and physical properties of Ta- and Cr-doped TiO2 systems in which imported tantalum oxide was replaced with an equivalent Brazilian raw material. Preliminary results confirm that this national oxide can be utilized to obtain electroceramics such as varistors.

Abstract: ZnO varistors are nonlinear resistors used as surge arresters in power transmission and distribution for the protection of electronic devices. Electrical characteristics of these materials have been extensively studied, but their mechanical behavior is not completely understood. It has been suggested that the breakdown of ZnO varistors is related to microstructure heterogeneities and processing defects. These defects are the same that usually control the mechanical strength of ceramic materials. In this work, mechanical properties (flexural strength, fracture toughness, elastic constants, and hardness) of five commercial blocks of ZnO varistors (class I) from different producers were measured and correlated to their microstructure. Pore fraction and size significantly affected the flexural strength.

Abstract: The effect of Co, Cr and Nb on the electrical properties of the grain boundaries of SnO2-based varistors was investigated. The powders were prepared by the method of evaporation and decomposition of solutions and suspensions. Varistor samples were obtained by uniaxial pressing followed by sintering at 1300 °C for 1h. The electrical properties of the grain-boundary region, such as resistance (R) and capacitance (C), were determined using ac impedance spectroscopy in the 27-330 °C temperature interval. Activation energies for conduction (EA) were calculated from the Arrhenius equation. The non-linear coefficients (α) and the breakdown electric fields (Eb) of the samples were determined from the current-voltage characteristics. The potential barrier height (Φb) was calculated using the Schottky-type conducting model. After a comparison of the characteristic parameters for different varistor compositions it was found that the Cr/Nb ratio has a crucial influence on the grain-boundary properties in SnO2 varistors.