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Effect of Gate Dielectrics on the Performance of P-Type Cu2O TFTs Processed at Room Temperature

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Abstract:

Single-phase Cu2O films with p-type semiconducting properties were successfully deposited by reactive DC magnetron sputtering at room temperature followed by post annealing process at 200°C. Subsequently, such films were used to fabricate bottom gate p-channel Cu2O thin film transistors (TFTs). The effect of using high-κ SrTiO3 (STO) as a gate dielectric on the Cu2O TFT performance was investigated. The results were then compared to our baseline process which uses a 220 nm aluminum titanium oxide (ATO) dielectric deposited on a glass substrate coated with a 200 nm indium tin oxide (ITO) gate electrode. We found that with a 150 nm thick STO, the Cu2O TFTs exhibited a p-type behavior with a field-effect mobility of 0.54 cm2.V-1.s-1, an on/off ratio of around 44, threshold voltage equaling-0.62 V and a sub threshold swing of 1.64 V/dec. These values were obtained at a low operating voltage of-2V. The advantages of using STO as a gate dielectric relative to ATO are discussed.

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Periodical:

Advanced Materials Research (Volume 856)

Pages:

215-219

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.856.215

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Online since:

December 2013

Authors:

Hala Al-Jawhari, J.A. Caraveo-Frescsa

Keywords:

Cuprous Oxide Thin Films, High-κ Gate Dielectric, P-Type TFTs, SrTiO3 Films

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© 2014 Trans Tech Publications Ltd. All Rights Reserved

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