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Based on the experiment data, considering both the data and the model, the least square method is used to identify parameters.
This set of data is applied for system identification.
Employed the least square method to analysis the experiment data and rigid body model, the value of f1, k1 and kp are listed in Table 2.
Parameter f1 [N·s/m] k1 [N/m] k3 [N/m] Value 7773.794 4.284*106 2.310*106 Fig. 7 shows the fitting curve of the elastic body model and the experiment data.
In comparison with Fig. 6, the fitting curve before stable state in Fig. 7 is more close to the experiment data.

GDMS analysis at the interface between areas with and without precipitation (see below) prove the V solubility limit to be at about 5 × 1017 cm-3 in correspondence with literature data [4].
Although the crystal's total height was 18.3 mm, due to significant compensation by nitrogen Hall effect data could not be acquired above 12 mm height.
Height above ∆E [meV] calc. from Hall data Hall data, extrapolated to 293 K the seed [mm] from nHall(T) from 1/ρ(T) n [cm -3 ] ρ [Ωcm] µ [cm²/Vs] 2.5 852 805 4.0 × 106 2.1 × 1010 77.5 5.7 777 786 7.7 × 106 1.8 × 1010 46.0 7.3 733 734 1.0 × 108 1.7 × 109 37.6 12.1 (340) 467 (9.8 × 108 ) 9.8 × 108 (6.5) As long as vanadium compensates shallow nitrogen donors, i.e.
Values extrapolated from high temperature Hall effect data in the range of 1015…1018 Ωcm have been already reported for those samples [2,7].
Charge carrier concentration n(RT) at 293 K is linearly extrapolated from the high temperature Hall effect data.

Task of server is to receive data from client, responds the client message to update the representation of virtual model.
Remote Desktop Protocol allows for carrying presentation data, serial device communication, and licensing information with encrypted data transmission.
Multipoint data delivery allows data from an application to be delivered in "real-time" to multiple parties without having to send the same data to each session individually.
Reduction of data transfer rate can be done by reduction of color bit.
Server is a system to control data between remote user and machine as shown in Fig.2[10].

Electrons or holes trapped in the gate SiO2 layer will be caused the transconductance (Gm) or threshold voltage (Vth) of a MOSFET increasing or reduction, and which is resulted from electron mobility degradation.
From the ESD testing data of power device with an ESD protection are quite satisfied.
[3] RFW2N06RLE data sheet, Intersil Corporation, (1999)
[4] RLD03N06CLE data sheet, Intersil Corporation, (1999)

The reduction in osmotic potential can be modeled using an additive or multiplicative approach.
For this simulation, the multiplicative model for osmotic potential reduction was applied
The data clearly illustrates that as ambient temperature increases, the quantity of water retained by the soil decreases as the ambient temperature rises.
Van Genuchten, “Estimating unsaturated soil hydraulic properties from tension disc infiltrometer data by numerical inversion”, Water Resour Res, vol. 32, no 9, p. 2683–2696, set. 1996, doi: 10.1029/96WR01525
Van Genuchten, “Estimation of the van Genuchten Soil Water Retention Properties from Soil Textural Data”, Pedosphere, vol. 20, no 4, p. 456–465, ago. 2010, doi: 10.1016/S1002-0160(10)60035-5.

Compared with the reduction of furfural content, a pyrolysis product of pentose polymers in hemicellulose, reduction of the content of guaiacyl lignin which contained one-carbon side chain was huger in the hindgut, indicating the degradation of depolymered lignin is greater than that of hemicellulose.
Pyrolysis GC-MS analysis of the hindgut contents of macrotermes barneyi The data processing was the same as 2.1 Fig. 2 The total ion chromatogram (TIC) of constituents at 650℃ for termite hindgut According to statistics (Fig.2), those whose retention time can be 2.00～6.00 min were mainly splitting ingredients of timbers’ constitutes like cyclobutene, styrene, furfural, pentanone et al and the metabolite of termite such as urea et al.

The results of simulation and calculation compared with empirical data.
Results of simulation The results of simulation and calculations were duplicated in the calculated complex ANSYS / LS-DYNA and compared with experimental data at certain points.
Acceleration on points 4 and 14. • - is experimental data Fig.5.
The efficiency of structures provided such a purpose: a) increase the lower frequencies of vibration, b) increasing the fatigue strength due to material selection; c) decrease the area of exposed solid surfaces with acoustic emission; d) reduction level of the transmission of force from the discharge chamber to the structural elements.

The Nb doping induces a reduction of θc at a rate of ~ -13.0 ℃ per at.% Nb as Nb is less than ~1.5 at.%.
In the XPS analysis, the XPS data are calibrated with the C 1s (286.4 eV) peak as the reference.
The Tlum, and ΔTsol are calculated based on the transmittance data and shown in Fig. 8b and Table 2.
The W doping is more effective in reducing θc and showed a reduction rate of ~ -17.2 ℃ per at.% W.
The 1.0 at.% W + 1.5 at.% Nb co-doped VO2 film realizes the reduction of θc to 23.0 ℃ and ~9.6% of ΔTsol.

Voice and data packets traverse over IP networks with fixed maximum capacity.
Separating the transmission of voice call and voice data, the utilization of network resources might be increased and could reduce the failure of voice call.
MPLS-TE ensures the efficient path selection and fast recovery mechanism with ensuring the quality of voice data [3].
This resulted in higher throughput which has a ripple effect on operating efficiency and reduction of infrastructure cost.

The ESFQR [26, 27] and ZDD metrics [28] characterize the near-edge geometry from a measured thickness- and height-data arrays, respectively.
The measured data were presented as frontside or backside ZDD depending on the reference plane selected [31, 32].
In this study, LPDs caused by wafer handling (edge-gripping) were investigated by using the geometric data measured from the 300 mm Si wafers.
This study aims to verify the possibility of predicting wafer-handling caused point defects using the measured edge geometric data of Si wafers.
Based on these data, there was no correlation between the ESFQR and the defective condition found in both defective and non-defective groups (Fig. 7).