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This could be due to the space holder with 50 wt % of SS 316 L that was too excessive than the stainless steel powder and the powder was unable to coat the grain particle of the space holder effectively.
Then, as shown in Fig. 1 (b) for 55 wt % SS 316 L, the struts were well-developed and the number of pores increased compared to 50 wt % SS 316 L.
Then, the number of open and interconnected pores has increased and the thicker and finer struts were produced comparing to other compositions.

A vast number of studies had been conducted in the past to further expand the functionality of ADI in term of the mechanical performance of these materials through transformation of their phase structures. [1-4].
Past study conducted using single step and two steps austempering heat treatment on un-alloyed ductile iron and nickel-molybdenum alloyed ductile iron at 260°C to 390°C found out that two step austempering processes resulted in higher yield and ultimate strength levels while maintaining reasonable levels of ductility, attributed by smaller grain sizes of bainitic ferrite and austenite [5-6].
Although the effect of alloying elements on the mechanical properties of austempered ductile iron had been broadly discussed before, there was least number of studies on the effect of niobium on the properties of ADI.

Generally, there are three standard procedures in crystal growth technology to achieve seeded growth of a new material: (i) spontaneous nucleation and growth of sufficiently large free-standing single crystal, (ii) use of grain selection phenomena in directional crystallization, (iii) utilization of a foreign single-crystalline material used as a large-area substrate for heteroepitaxial growth.
Near to the substrate side (Fig. 3c) a large number of cracks (dark linear features) are observed.
In layers thinner than 1 mm, the crystal quality suffers from large number of cracks which are produced at the substrate side because of the crystallographic mismatch between the SiC and AlN crystalline materials.

Accordingly, the tin oxide transparent conductive coatings with different film thickness, sheet resistance and resistivity can be obtained by relying on alternating or changing the solution concentration, the solution flow rate and the number of spraying coatings.
The SEM indicates crystal grain sizes of about 200mm are homogeneous.
Fig. 5 The variation of hemispheric emissivity versus sheet resistance for all the samples It can be considered from the discussion of electrical part that in the case of smaller thin films thickness, increasing films thickness or the number of layers can obviously improve electrical and infrared reflectance, but as far as the thicker thin films is concerned, the decrease in its resistivity is limited to a certain extent.

SnO2 thin film can be prepared by a number of methods, such as CVD [6], sputtering [7], spray pyrolysis [8], plasma and sol-gel methods [9].
It is impossible that grains have so huge size.
We think that the phenomena could find its origin in the large number of oxygen vacancies existing in the materials, and also in their interaction with the two antimony states of charge.

The perovskite grains exist within mixed corrosion of structure and between the crystals of calcium ferrite.
For a small number of Hematite, the internal is filled by dicalcium silicate and glass phase and a few scattered granular hematites located in the middle of interwoven structure.
Some magnetite and calcium ferrite formed corrosion structure and small number of calcium ferrite formed interwoven structure itself.

As a dimensionless number, C-value is adjustable between 0（no erosion place like water area）~1(completely erosion place like bare land), through the maximum of which is hardly possible.
Covering 1020,000 sq.m², it has become an important commodity grain base.
The land in northeast black soil area has good soil conservation capacity, due to its forest acreage and vegetation number and variety. 3.

Increasing the annealing temperature resulted in a decrease in the internal stress in the grains and a reduction in the number of defects.
From the XRD analysis, in comparison with the pure ZnO films, the full width at half maximum (FWHM) of the (002) diffraction peak increases in the doped films suggests that doping the samples results in an expansion of the ZnO lattice with an increase in both the number of defects and the interfacial stress.

From Raman patterns of fig.2, the peak’s number decreasing at the low frequency range means that the symmetry of BCY(x) increase as x becomes large.
Considering the result of fig.2, the peak’s number decreases with the increasing of x imply the sample’s symmetry enhances, it can be concluded that ion Y3+ have taken place in the lattice position of Ce.
The intercept with the real axis at high frequencies is the grain (bulk) boundary response of the electrolyte.

From the perspective of the number of devices, the advantages of the new structure are also remarkable.
As shown in Table 2, the reduction numbers of adders, multipliers and the delay units for the 4-tap FIR filter are 4, 7 and 4, respectively and those are 20, 23 and 20 for the 12-tap FIR filter when ITMR is applied.
Carroll: Fine-Grain SEU Mitigation for FPGAs Using Partial TMR (2007) [8] Fernanda Lima Kastensmidt, Luigi Carro and Ricardo Reis: Fault-Tolerance Techniques for SRAM-based FPGAs (China Astronautic publishing house, China 2009) [9] Abdallah M.