Search results

COD concentration of small liquor brewing industry wastewater distillation pot of water up to 8 × 104~1.2×106mg/L, steaming pot of water COD grain up to 7 × 10³ ~ 7 × 104mg/L, two wastewater 1:5 after mixing, the COD concentration of 89751~10476mg/L.Low operating cost iron microelectrolysis having good effect, long life and other advantages , is widely used in printing and dyeing, slaughter , alcohol and other wastewater treatment[3-6] .
Fe2+, Fe3+ can also be a number of inorganic reaction precipitate, such as S2-, etc.

Diffusion coefficients of silicon and chromium Number of sample (t[°C], t[h]) 1015DSi [cm 2/s] 1015DCr [cm 2/s] sample 1 (500°C, 860h) 1.7 ± 0.4 1.0 ± 0.7 sample 2 (550°C, 529h) 4.4 ± 1.6 5.6 ± 1.0 sample 3 (600°C, 383h) 10.1 ± 5.8 5.3 ± 1.9 sample 4 (650°C, 80h) 98.3 ± 20.5 111.4 ± 31.8 sample 5 (700°C, 49h) 484.4 ± 68.8 1370.2 ± 1350.0 sample 6 (750°C, 7h) 1548.0 ± 300.0 395.3 ± 120.0 sample 7 (800°C, 30h) 44.7± 33.6 101.9 ± 23.3 sample 8 (850°C, 16h) 1219.0 ± 312.0 1593.2 ± 304.0 sample 9 (900°C, 8h) 2155.8 ± 306.0 3015.8 ± 426.0 sample 10 (950°C, 4h) 6585.6 ± 662.0 10876.0 ± 1180.0 sample 11 (1000°C, 2h) 17797.0 ± 1880.0 16875.0 ± 1940.0 x measured concentration _____ calculated concentration _ . _ . _ corrected weld position Figs. 2, 3 present as examples the segment of transition zone with distinct redistribution of elements.
Large scatter of experimental data is very likely due mainly to accompanying processes - different diffusion rates in crystal and along grain boundaries, forming of intermatallic compounds [6-9], segregation, changing activities of components.

For this value of the nitriding potential, the compound layer which has a thickness of 2 mµ is formed on top of the diffusion zone where dense and fine precipitates of γ' iron nitrides are present inside the ferrite grains.
If this limit is exceeded, the compound layer (γ' iron nitride) forms Acknowledgements This work was carried out in the framework of CNEPRU project under code number J0300220070045 of the Algerian ministry of high education and scientific research.

Since it was demonstrated [5] that the time for the globulizing the silicon grains takes few minutes, the idea was to dramatically reduce the solution time, with the advantage of energy saving, more profitable use of furnaces and equipments, together with lower risk of distortions, in other words, significant reduction of treatment costs.
The letter (A or B) refers to the different cycle, while the number (1, 2, 3) describes the different ageing treatment.

With the solidification going on, the congregated quantity of TiC particles increased continually, leading to a large number of TiC particles being accumulated in liquid phases in front of solidification interface.
Strength enhancement of composites is concerned with the TiC particles dispersion distribution and grain refinement.

Aspherical surface vertex R 47.699 Spherical surface R -375.44 Korenich K 2.8393 A -1.9358E-06 B -1.8913E-08 C 4.3546E-11 D -6.2859E-14 Lens diameter(mm) 40 Lens thickness(mm) 9 Focal point distance (mm) 80 Lens material Acryl PMMA (Acrypet VH001, MITSUBISHI RAYON) Refractive index 1.49 Abbe's number 58 Figure 1.
References [1] M.Saeki, T.Kuriyagawa, K.Syoji, Machining of Aspherical Molding Dies Utilizig parallel Grinding Method, Journal of the Japan Society of Grinding Engineers (JAPE),68(8),(2002),1067-1071 [2] H.Ohmri, Electrolytic in-process dressing (ELID) grinding for optical parts manufacturing, International Progress in Precision Engineering IPES 7(1993)134-148 [3] H.Ohmri, T.Nakagawa, Analysis of mirror surface generation of hard and brittle materials by ELID (Electrolytic in-process dressing) grinding with superfine grain metallic bond wheels,Annals of the CIRP 44(1)(1997)261-264 05 10 15 20 25 30 35 40 60 300 600 900 cooling time (sec) shape error PV(μm) 0 5 10 15 20 25 30 35 40 125 140 155 170 holding pressure (MPa) shape error PV (μm) Figure 9 Relation between holding pressure and shape error PV Figure 8.

i, j, k express the node number of x, y, z axis respectively, adopting central difference method to deal with Control equations: 2 2 2 2 2 2 2 2 2 [ ] ( 1, , ) [ ] ( 1, , ) ( , 1, ) ( , 1, ) ( ) 2 ( ) 2 ( ) ( ) 2 2 2 ( , , 1) ( , , 1) [ ] ( , , ) 0 ( ) ( ) ( ) ( ) ( ) v v T i j k T i j k T i j k T i j k x x x x y y T i j k T i j k T i i k z z x y z α α α α α α α α α + + + − − + + + − ∆ ∆ ∆ ∆ ∆ ∆ + + + − − + + = ∆ ∆ ∆ ∆ ∆ (2) The melting latent heat △m is converted as the hoist of melting temperature (critical temperature).
So along the welding direction the laser power is greater, the heat affected area is greater, the cooling rate is slower, it is disadvantageous to control the heat-affected zone grain growth.

Establishing of Random Aggregate Model Assuming that the shape of aggregate is spherical particle, according to 3D Fuller gradation curve obtained in the conditions of optimal close-grained aggregate [9], the expression formula of gradation curve as follow in Eq.(1)
The probability distribution curve can be obtained by the formula (2), accordingly, the aggregate number of various particle size can be obtained.

Enhanced properties of RPC are obtained though grain size optimization, incorporation of micro-silica and post-set heat-treating.
Table 2 Experimental results Specimen number Yielding displacement (mm) Yielding force (kN) Ultimate displacement (mm) Maximum force (kN) Ductility factor Energy dissipation (kN.mm) COL1 18.5 146.6 74.2 152.8 4.0 3.8×105 COL2 18.8 130.1 89.6 140.1 4.8 5.3×105 Fig. 2 Hysteretic loops of COL1 Fig. 3 Hysteretic loops of COL2 Effect of Amount of Transverse Reinforcement.

In the case of thin silicon wafers, the number of total reflections inside the silicon wafer increases, so the intensity of the transmitted infrared radiation should become lower.
The wafer was polished by pressing the polishing cloth under pressure (9 kPa) onto the silicon wafer while diamond slurry (average grain diameter 1µm) was dripped on to it.