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Introduction Now, grain bagging machine has been widely used in grain storage of grain depot [1].
Grain conveyer device.
Grain bagging device.
The fixture is composed of a number of bars, with elastic rubber belt fasten, to prevent the bag off.
Acknowledgements The work has partly been Supported by Leading Academic Discipline Project of Shanghai Municipal Education Commission, Project Number: J51902.

Egb is the elastic modulus of the grain boundary region.
Fv is the vacancy formation energy at grain boundaries.
Thus it can be determined that Cb(σ=σ) and Cb(σ =0) are 0.683 at.% and 0.482 at.% according to Auger peak height ratio curve, and the increased grain-boundary concentration of sulfur induced by tensile stress is Cb(σ=σ) - Cb(σ=0) = 0.201 at.%. 3.2 Molar volume of grain boundary and vacancy formation energy at grain boundaries Fv In order to transform the increase of sulfur in molar fraction into that in atomic number, the average grain-boundary density to be about 50% of the lattice density was adopted.
So, the increased number of sulfur atoms in 1 m3 volume of grain boundary induced by the applied tensile stress is 6.02×10 23 ×7.04×10 4×0.201% = 8.52×10 25 .The vacancy formation energy at grain boundaries has been selected to be 1.5 eV in present paper. 3.3 RESULT OF ELASTIC MODULUS AT GRAIN BOUNDARIES The applied stress σ is 35kg / mm 2 = 3.43×108 Pa in Misra's experiment. 5 For polycrystalline material, the normal directions of grain boundaries are oriented randomly to the direction of applied stress over angles ranging from 0 o to 90o.
The Cb-curve is in grain boundary concentration (Ref. 2-4).

Marx str., Ufa 450000 Russia RZValiev@mail.rb.ru Keywords: Severe plastic deformation, ultrafine grains, grain boundaries, mechanical properties.
Introduction Ultrafine-grained (UFG) materials with a grain size in the submicrometer (100-1,000 nm) or nanometer (less than 100 nm) range possess much higher length of grain boundaries than usual coarse-grained counterparts; that is why the properties of UFG materials depend considerably on the structure and behavior of internal interfaces - grain boundaries (GBs).
The concept of grain boundary engineering or grain boundary design was introduced by T.
Results The evidence available to date shows that both ECAP and HPT processing provide an effective procedure for achieving different misorientation distributions because there is a high fraction of low-angle boundaries after a small number of passes but a lower fraction of low-angle boundaries when the number of passes is increased [2, 4, 9].
Misorientation Number of Misorientations Angle (deg) 0 200 400 600 800 1000 3.4 9.2 14.9 20.6 26.4 32.1 37.8 43.6 49.3 55.0 60.8 66.5 72.2 78.0 83.7 89.4 (a) (b) Fig. 3.

The number and effectiveness of the abrasive particles during grinding depends on factors such as the abrasive concentration and the extent of particle protrusion from the wheel’s surface.
The number of active abrasives of the effectively removal materials is only very small part of the total grains, the redundant grits not only increase the cost of tools and waste a large number of abrasives, but also seriously interfere with the work of effective abrasives, increase the grinding temperature, decrease the chips volume, the manufacture efficiency and the service life [1-2].
Fig. 6 shows the grain pattern parameters for the third grain distribution pattern.
After cooling the buried height of grains is 30% by alloy solder or grains protrusion rate are about 70%.
American patent application number US 4925457, US 5049165, US 5092910 researched the mesh screen technique [12-14].

However, not only triple junction drag affects grain growth and grain microstructure evolution.
As shown [10, 12,14,15] grain boundary triple junctions do not only drag grain boundary motion and grain growth, but also change essentially the evolution of grain microstructure during grain growth.
For large (large or grain size) grain growth kinetics is determined by the grain boundary mobility and follows a parabolic law: i.e. the mean grain size .
The generalized von Neumann–Mullins relation [17] in terms of the temporal change of the grain area S can be expressed in terms of Λ: for (9) for (10) where . n is the number of the triple junctions (neighboring grains), is the grain boundary surface tension and .
However, the beauty and mathematical clarity of the von Neumann-Mullins relation encouraged a number of attempts to search for a 3D analogy of this relation [19-22].

It is clear that a tracer atom need not sample a large number of grains and grain boundaries in order for its effective diffusivity to be given by the Hart Equation (Eq. 1).
In a diffusion experiment, it can be expected that tracer atoms will traverse a number of grains in the diffusion time.
The direction of the random walks of the particles and the evaluation of the spatially dependent jump frequencies (which represent the diffusivities) is made using random numbers.
To simulate a thin-film tracer source 10 6 particles are created and released from the surface and allowed to diffuse for a time t (proportional to the number of jump attempts per particle).
These concentration profiles are built up simply by determining the number of particles that have reached a given distance from the tracer source plane after time t.

Fig.2 shows the microstructure after recrystallisation for Cube orientated single crystals with an initial dislocation density of ρ=1014m-2 and number of nuclei w=0.05% at different temperatures (573 K, 673 K, 773 K).
Fig.2: Microstructure of fully recrystallised single Al crystals, number of nuclei w=0.05% and initial dislocation density ρ=1014m-2.
In Fig.3 the number fraction of grain boundaries is shown as function of the misorientation angle for Al single crystals with initial Cube orientation at 573 K, initial dislocation density of ρ=1014m-2 and w=0.05%.
For the case (1) simulation in Fig.3(a) one can see that the number of grain boundaries in the regime below 15° is clearly larger (50%) than in Fig.3(b) for the case (2) simulation.
Fig.3: Number fraction of grain boundaries as function of the misorientation angle for Al single crystals with initial Cube orientation at 573 K, initial dislocation density of ρ=1014m-2 and w=0.05%.

The position of the 6 nuclei (also shown in Fig. 1) is marked by numbers in (b).
In Fig. 5 is the number of neighbors for each grain in the initial condition plotted versus the grain volume.
Number of grain neighbors for all grains in the initial condition (see Fig. 4a).
The number of neighbors increase with grain volume largely as should be expected theoretically [22].
The figure further shows that also the number of neighboring grains does not seem to explain which grain will grow.

Introduction China is a major grain producer as well as a major grain consumer.
As an industry engaged in grain purchasing and storage, the operation in grain depot has its timeliness and periodicity.
Moreover, the forecasting of the grain depot’s electric power guarantees the safety of our state’s grain, which is macro-controlled by the state itself.
Is the number of hidden layer node present, and stands for threshold value.
If we want to increase the accuracy and improve the efficiency, we could integrate a number of other environmental factors in the power prediction, which is also our objective of the study in the future.

The probability of diffraction spot overlap, which increases with the number of illuminated grains as well as with the orientation spread within the grains.
Unfortunately, it also has the disadvantage of requiring a larger number, Nr, of useful diffraction spots per grain to produce quality reconstructions.
In these the quality of the reconstruction was measured by a function FOM2, defined as the ratio between the number of wrongly assigned pixels and the total number of pixels belonging to the grain.
• In conventional reconstructions the number of projections through a given voxel can be determined at will by adjusting the angular step.
By contrast, in diffraction, the number and directions of the projections giving rise to nonzero intensities is given by the crystallography of the system.