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Online since: February 2011
Authors: Xiao Lin Jia, Mei Pin Ma, Wei Liu, Li Tian, Xiao Peng Mo
The phase of the samples in Fig. 1 could be identified as an ordered olivine-type structure indexed to orthorhombic Pnmb(JCPDS card number: 40-1499).
Online since: April 2014
Authors: Panli You
The diffraction peaks of Li2Sr1-xSiO4: x Tb3+ are indexed by Li2SrSiO4 (JCPDS card No. 055–0217) and no impurity phase is detected.
The Li2SrSiO4 has the characteristic absorption peak at 1109.3, 904.4,857.0, 820.6, 551.4, 533.7, 482.7, 455.0 cm-1 (wave number), respectively.
Online since: April 2012
Authors: Xiu Jian Zhao, Jun Xu, Wen Qing Shi, Pan Lei, Dong Lin Xia
All the reflection peaks observed for the films are in agreement with the values from standard card (JCPDS No. 39-0354).
Acknowledgement This work was partially supported by Key projects for National Natural Science Foundation, China (grant number 51032005), and supported by State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology).
Online since: January 2007
Authors: Dong Ying Ju, Pei Bian
OHmnClNHOmHOMeCOnHMeClOHOCNH 2 4 242 22 24224 )1(2 )( −+++↓⋅→⋅+⋅ (1) where Me are Ni, Mn, Cu, Zn and Fe ion. m and n are the number of hydrate .
Comparing the measured XRD patterns with JCPDS cards, it was confirmed that high purified spinel ferrite was obtained by the above method.
Online since: July 2013
Authors: E.M. Pechlivani, G. Stergioudis, Eleni Pavlidou, S. Skolianos, D. Tsipas
Our measurements for carburized Ni at 3800C show peaks for the reflection (111) at 2θ=44.43 degree and for 6500C at 2θ=44.45 degree, while the reflection (111) for pure f.c.c Ni exhibits intensity maximum at 2θ=44.493 degree (the indexing of the peaks for f.c.c Ni was accomplished with the PDF card 65-2865) [21].
Number 1
[21] PC Powder Diffraction Files, JCPDS-ICDD, 2005
Online since: October 2011
Authors: Jian Sun, Xiao Yan Li, Yan Xiang Wang, Yao Hui Hu
The synthesis temperature was 220℃.It can be seen that all of the diffraction peaks can be indexed within experimental error as hexagonal ZnO phase with lattice constants a =0.32508 nm and c = 0.52069nm by comparison with the data from JCPDS cards No.36-1451.
The concentration of growth units of [Zn(OH)4]2- and nucleation units of Zn(OH)2 were low, so the initial number of ZnO nuclei were less.
Online since: March 2018
Authors: Aleksey A. Vedyagin, Elena Krivoshapkina, Pavel Krivoshapkin
As follows from the patterns, the crystal phase of both supports is γ-alumina (JCPDS card number 10-0425).
Online since: December 2016
Authors: Kristaps Rubenis, Janis Locs
Results and Discussion All of the observed reflexes in the recorded diffraction patterns for all of the synthesized products regardless of whether the co-solvent was used or not (Fig. 1.) can be attributed to the tetragonal cassiterite phase of SnO2 (JCPDS card No. 00-041-1554).
If short-carbon-chain alcoholic co-solvents were used (methanol, ethanol, 2-propanol), the SSA of the synthesized material decreases with an increasing number of carbon atoms in the used co-solvent molecule.
Online since: November 2010
Authors: Hai Yan Du, Jia Yue Sun, Jian Bo Xian, Xiang Yan Zhang
The selected area electron diffraction (SAED) patterns further demonstrated the single-crystalline nature of the NCs and confirmed the cubic-phase of MF2:Yb3+/Er3+ NCs (inset of Fig. 1(a-c)).Figure 1(d-e) shows the XRD patterns of the as-prepared MF2:Yb3+/Tm3+(M=Ca, Sr, Ba) NCs, and vertical bars below each pattern are their corresponding standard cards (JCPDS Card No. 65-0535 (CaF2), 06-0262 (SrF2), and04-0452 (BaF2), respectively).
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Online since: February 2024
Authors: Cheng Seong Khe, Kwok Feng Chong, Gomaa Abdelgawad Mohammed Ali, Eslam Atef Abdelaziz Aboelazm, Muhammad Fadhlullah Abd Shukur, Mohamed Shuaib Mohamed Saheed
The XRD patterns show all diffraction peaks, which display the cubic structure of Co3[Co(CN)6]2 matching with JCPDS card No. 77-1161.
Furthermore, in Fig. 1(b), broad peaks of Co3C correspond to JCPDS card No. 26-0450, revealing that we have a small average grain size of 12.5 nm [25, 26].
The capacitive retention, calculated as the ratio of the specific capacitance at a certain cycle number to the initial specific capacitance, was used to indicate the material's stability over repeated charge-discharge cycles.