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Materials and Methods: Samples of imported latex orthodontic elastics [Ormco(USA), G&H (USA), Creative Orthodontics (China), Tomy Elastics (Japan)]were selected to compare their dimensional characteristics and mechanical properties with Thai non latex elastics.
Materials and methods Materials: Five manufacturers of orthodontic elastics were chosen: four commercial latex elastics, i.e.
Journal of Applied Polymer science. 2001;81(3):710-8

Optimization of Economic Indexes in Cangshang Gold Mine Huang Ping1, Lv Wensheng1, Yang Peng 2*,3* and Yu Genbo4 1University of Science & Technology Beijing, Civil & Environment Engineering School, Beijing 100083, Beijing, P.R.C. 2 Beijing Union University, Beijing 100101 3 University of Science & Technology Beijing, Beijing, P.R.C. 4 yangpeng@buu.edu.cn/ 2 pyang@ustb.edu.cn , University of Science & Technology Beijing, Civil & Environment Engineering School, Beijing 100083, Beijing, P.R.C.
，which provides much research material and support during the research crew worked at the mine, and the discussion and suggestion also improves the study.
[8] YUAN Huaiyu, LIU Baoshun, and LI Keqing, “United Dynamic Optimization Study on the Rational Beneficiation Feed Grade,” Journal of University of Science and Technology Beijing, vol. 24(3), Jun. 2002, pp. 239-242.

Research of Log System for IP Network Storage Deng, Anyuan School of Information Science and Technology Jiu Jiang University Jiu Jiang, China 28737970@qq.com Keywords:. storage system; log system; log; log management Abstract.
Mishing, in: Diffusion Processes in Advanced Technological Materials, edtied by D.
Clem: submitted to Journal of Materials Research (2003) [6] P.G.

China building materials science & technology. 2012, 38-39+53
Journal of building materials.7(2004)447-450

I – 83040 Morra de Sanctis (AV), Italy. 4 Department of Chemical, Materials and Production Engineering University of Naples Federico II Piazzale Tecchio 80, I - 80125 Naples, Italy aciro.caramiello@emaht.com, bstefania.iannuzzi@emaht.com, calessandro.acernese@emaht.com, ddaddona@unina.it Keywords: gas turbine manufacturing, lost wax process, superalloys, ceramic inclusion, process optimization, SVD, subspace algorithms, neural networks.
Acknowledgement The present work has been accomplished within the framework of the project IFACOM (Intelligent Fault Correction and self Optimizing Manufacturing systems FoF NMP – 285489) coordinated by NTNU (Norwegian University of Science and Technology - Trondheim, Norway) in which EMA and the  Dept. of Materials & Production Engineering (DIMP) of University of Naples “Federico II” are active partners.
[10] D’Addona, D., Teti, R., Caprino, G., 2012, Ultimate Strength Prediction of Artificially Damaged Composite Laminates Based on Neural Networks, Journal of Intelligent & Fuzzy Systems, ISSN: 10641246, 23/5: 217–223

Introduction FMS is a complex system consisting of elements like workstations, automated storage system and material handling devices such as robots and AGVs.
In recent years, AGVs are widely used in FMS to transport various materials around a manufacturing facility or a warehouse due to their flexibility and compatibility.
Y.C.Ho and H.C.Liu [4] proposed multiple-load AGV in material transport processing and get the best pickup scheduling rules according to throughput criteria in the simulation analysis.
[6] Minqiang Li, Jisong Kou and Dan Lin: The basic theory and application of genetic algorithm (Science press, Beijing 2002)
[7] Yijun Dong, Gong Zhang, Jie Zhang: Journal of Shanghai Jiao Tong University. vol.44(2009), No. 4, p.528-534.

Journal Citation (to be inserted by the publisher) Copyright by Trans Tech Publications First Principles simulations of extended defects at cubic SiC surfaces and interfaces A.
Introduction Silicon carbide is a group IV compound semiconductor showing unique properties, that allow to consider it as a true surface-science 'laboratory' [1]: the charge polarization of the Si-C bonds makes SiC a polar compound, midway between GaAs and ZnSe [2]; the existence of hundreds of tetrahedral SiC polytypes [3] rises fascinating fundamental problems and opens the way to many potential technological applications.
Thanks to the large lattice mismatch of ~ 20%, this interface may be considered as a model of high lattice mismatch heterostructure of covalent materials, where ab initio simulations are still affordable.
Bermudez, Nature Materials, 2 (2003), in print

Materials and Methods Chitosan (deacetylation degree of 82%) was supplied by Polymar (Fortaleza, Brazil).
[3] Muzzarelli, R.A.A., Amphoteric derivatives of chitosan and their biological significance, in Chitin and Chitosan, Elsevier Applied Science, London, 1989
Young, Exudate-handling mechanisms of two foam-film dressings, Journal of Wound Care, 17(7) (2008) 309-315
[10] ASTM E 96-95 (1995) Standard test method for water vapor transmission of materials, Annual Books of ASTM Standards

Just-in-time purchasing was evolved from the just-in-time (JIT) manufacturing, which is a technique that in simple terms calls for the reduction of inventory by having materials ready at each point in the manufacturing process, just in time to be used.
JIT is typically implemented while it translates into production and delivery of finished goods just in time to be sold, subassemblies just in time to be assembled into finished goods, fabricated parts just in time to go into subassemblies, and purchased materials just in time to be transformed into fabricated parts [1].
Acknowledgements This paper is sponsored by Project of the Education Department of Zhejiang Province (GK080807) and National Natural Science Foundation of China (No. 70903021).
Gunasekaran, Just-in-time purchasing: An investigation for research and applications, International Journal of Production Economics, 59(1999), 77–84

A Novel Shield Gate 4H-SiC MOSFET with Reduced Reverse Recovery Losses Disen Peng1,a, Quanyuan Feng2,b* 1The School of Information Science and Technology, Southwest Jiaotong University, China apengdisen@my.swjtu.edu.cn, bfengquanyuan@swjtu.edu.cn Keywords: 4H-SiC MOSFET, shield gate, reverse recovery losses.
Parameter Con-ATMOS ATMOS-SSG P-Shield left region width, WP-S1, [μm] 0.7 0.7 P-Shield bottom of right region width, WP-S2, [μm] 1.0 1.0 N+ region width, WN+, [μm] 0.7 0.7 P-body region width, Wp-body, [μm] 0.7 0.7 CSL region maximal width, WCSL, [μm] 1.2 1.2 P -Shield region thickness, TPS, [μm] 1.4 1.8 N+ region thickness, TN+, [μm] 0.4 0.4 P-body region thickness, Tp-body, [μm] 0.5 0.5 CSL region maximal thickness, TCSL, [μm] 0.5 0.9 The side of Gate oxide thickness, TO_S, [nm] 100 100 The bottom of Gate oxide thickness, TO_B, [nm] 100 200 Shield gate thickness, TSG, [μm] / 0.2 Shield gate width, WSG, [μm] / 0.8 N-drift region concentration, Nd, [cm-3] 8E15 8E15 CSL region concentration, NCSL, [cm-3] 2E16 2E16 Substrate region concentration, NSub, [cm-3] 1E19 1E19 P-Shield region concentration, NPS, [cm-3] 1E18 1E18 Materials and Experimental Methods The power device structure discussed refers to 4H-SiC asymmetric cell Trench MOSFET(ATMOS) structure [7].
Zhang, "A Novel SiC Asymmetric Cell Trench MOSFET With Split Gate and Integrated JBS Diode," in IEEE Journal of the Electron Devices Society, vol. 9, pp. 713-721, 2021, doi: 10.1109/JEDS.2021.3097390
Applied Mechanics and Materials, vol. 121–126, Trans Tech Publications, Ltd., Oct. 2011, pp. 1585–1589