Paper Titles
Electrospun ZnO Nanowires as Gas Sensors for Propanol Detection
p.446
Modeling of Vibratory Microgyroscope with Manufacture Errors Based on Parameters Identification Theory
p.452
Replication, Characterization and Simulation of Micro Injection Molded Microlens Arrays Using Technical Amorphous Polymers
p.458
Simulation Research of the Long-Base Silicon Magnetic Sensitive Diode Negative-Resistance Characteristics on the Base of ATLAS
p.465
Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure
p.471
The Design of the Integrator of Sigma-Delta Modulator
p.477
The Study on the Analytic Model and Design Software for IP of Piezoresistive Cantilever Beams
p.482
The Characteristics of MEMS Based Seismic Sensors Using the Electrochemical Approach
p.486
Simulation Research on Micro-Cavity Flow Field Characteristics of Liquid Floating Rotor Gyro
p.490

Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure

Article Preview

Abstract:

In the paper, a touch mode capacitive pressure sensor with double-notches structure is presented. The sensor employs a special SiC-AlN-SiC sandwich structure to achieve high-accuracy pressure measurement in hash environment such as high-temperature. The analysis to the relation of capacitance and external pressure of the sensor shows that the sensor has high sensitivity and long linear range simultaneously. In addition, the technical process of the sensor has been designed in detail in the paper. The research shows that the sensor packaged in a high-temperature ceramic AlN can withstand higher temperature. Consequently, the sensor can be applied in high-temperature and harsh environment.

You might also be interested in these eBooks
Micro-Nano Technology XIV View Preview

Info:

Periodical:

Key Engineering Materials (Volumes 562-565)

Pages:

471-476

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.562-565.471

Citation:

Cite this paper

Online since:

July 2013

Authors:

Hao Jie Lv, Tao Geng, Guo Qing Hu

Keywords:

High-Temperature, Pressure Sensor, SiC-AlN Structure, Technical Process

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] G. L. Pearson, W. T. Read, jr, W. L. Feldman, Deformation and Fracture of Small Silicon Crystals, Acta. Metall. 5 (1957): 181-191.

DOI: 10.1016/0001-6160(57)90164-5

Google Scholar

[2] Liudi Jiang, Rebecca Cheung, A Review of Silicon Carbide Development in MEMS Applications. Int. J. Computational Materials Science and Surface Engineering. 2 (2009): 225-240.

Google Scholar

[3] Rebert Okojie S, Operation of 6H-SiC pressure sensor at 500℃, Sensor and Actuators A. 66 (1998): 200-204.

DOI: 10.1016/s0924-4247(98)00009-0

Google Scholar

[4] Shigehiro Nishino, J. Anthony Powell, Herbert A. Will, Production for Large-area Single-crystal Wafers of Cubic SiC for Seminconductor Devices, Appl. Phys. Lett.. 42 (1983): 460-462.

DOI: 10.1063/1.93970

Google Scholar

[5] H. J. Lv, Q. Guo, G.Q. Hu, A touch mode capacitive pressure sensor with long linear range and high sensitivity, 3rd IEEE International Conference of Nano/Micro Engineered and Molecular Systems, (2008): 796-800.

DOI: 10.1109/nems.2008.4484445

Google Scholar

[6] Victor V. Luchinin, Andrey V. Korlyakov, Alexander A. Vasilev, Silicon Carbide-Aluminium Nitride: a new high stability composition for MEMS, The Symposium on Design, Test and Microfabrication of MEMS and MOEMS, (1999): 782-791.

DOI: 10.1117/12.341273

Google Scholar

[7] H. J. Lv, G.Q. Hu, W. Zou, C. Y. Wu and Y. F. Chen, Design and thermal analysis of high performance MEMS capacitive pressure sensor, Optics and Precision Engineering, 18 (2010): 1166-1174.

Google Scholar

[8] S. Timoshenko, S. Woinowsky-Kreger, Theory of Plates and Shells, 2nd ed., MacGraw-Hill, New York, 1959.

Google Scholar

[9] K. Nath, Alfred B. Anderson, Adhesion and bonding of polar and nonpolar SiC and AlN surfaces: tight-binding band theory, Physical Review B. 40 (1989): 7916-7922.

DOI: 10.1103/physrevb.40.7916

Google Scholar