A Study of Exfoliated Molybdenum Disulfide (MoS2) Based on Raman and Photoluminescence Spectroscopy

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In this study, We demonstrate mono and few layers MoS2 samples on the SiO2(270nm)/Si substrate from bulk MoS2 crystal by micromechanical exfoliation technique. We have systematically studied Atomic Force Microscopy, Raman and PL properties of mono and few layer MoS2 on the SiO2(270nm)/Si substrate. First, we find that the number of layer values dependent the Raman and PL emission. First, Raman intensity area ratio of the MoS2 E12g, A1g and 2LA modes to that area of the Si substrate increased linear with increasing number of layers MoS2. Second, Normalized PL intensity area of the (A) peak decreased linear with increasing number of layers MoS2. The value of those graphs is a method to understand the number of layers the exfoliated MoS2.

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Solid State Phenomena (Volume 271)

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40-46

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January 2018

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© 2018 Trans Tech Publications Ltd. All Rights Reserved

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[1] K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, A. A. Firsov, Electric Field Effect in Atomically Thin Carbon Films, Science 306 (2004) 666-669.

DOI: 10.1126/science.1102896

Google Scholar

[2] K. K. Kam, B. A. Parkinson Detailed Photocurrent Spectroscopy of the Semiconducting Group VIB Transition Metal Dichalcogenides, J. Phys. Chem. 86 (4) (1982) 463-467.

DOI: 10.1021/j100393a010

Google Scholar

[3] S. Lebègue, O. Eriksson, Electronic Structure of Two-Dimensional Crystals from ab initio Theory, Phys. Rev. B 79 (11) (2009) 115409.

DOI: 10.1103/physrevb.79.115409

Google Scholar

[4] A. Splendliani, L. Sun, Y. Zhang, T. Li, J. Kim, C. -Y. Chim, G. Galli, F. Wang, Emerging Photoluminescence in Monolayer MoS2, Nano Lett. 10 (4) (2010) 1271-1275.

DOI: 10.1021/nl903868w

Google Scholar

[5] K. F. Mak, C. Lee, J. Hone, J. Shan, T. F. Heinz, Atomically Thin MoS2: A New Direct-Gap Semiconductor, Phys. Rev. Lett. 105. 136805 (2010) 136805.

DOI: 10.1103/physrevlett.105.136805

Google Scholar

[6] A. Kuc, N. Zibouche, T. Heine, Influence of Quantum Confinement on the Electronic Structure of the Transition Metal sulfide TS2, Phys. Rev. B 83 (24) (2011) 245213.

Google Scholar

[7] S. W. Han, H. Kown, S. K. Kim, S. Ryu, W. S. Yun, D. H. Kim, J. H. Hwang, J. -S. Kang, J. Baik, H. J. Shin, S. C. Hong, Band-Gap Transition Induced by Interlayer van der Waals interaction in MoS2, Phys. Rev. B 84 (4) (2011) 045409.

DOI: 10.1103/physrevb.84.045409

Google Scholar

[8] H. Li, G. Lu, Z. Yin, Q. He, H. Li, Q. Zhang, H. Zhang, Optical Identification of Single and Few-Layer MoS2, small 8 (5) (2012) 682-686.

DOI: 10.1002/smll.201101958

Google Scholar

[9] C. Lee, H. Yan, L. E. Brus, T. F. Heinz, J. Hone, S. Ryu, Anomalous Lattice Vibrations of Single and Few-Layer MoS2, ACS Nano 4 (5) (2010) 2695-2700.

DOI: 10.1021/nn1003937

Google Scholar

[10] B. Radisavljevic, A. Radenovic, J. Brivio, V. Giacometti, A. Kis, Single-layer MoS2 Transistors, Nature Nanotechnol. 2011, 6, 147-150.

DOI: 10.1038/nnano.2010.279

Google Scholar

[11] H. Li, J. Wu, Z. Yin, H. Zhang, Preparation and Applications of Mechanically Exfoliated Single-Layer and Multilayer MoS2 and WSe2 Nanosheets, Acc. Chem. Res. 47(2014) 1067-1075.

DOI: 10.1021/ar4002312

Google Scholar

[12] K. S. Novoselov, D. Jiang, F. Schedin, T. J. Booth, V. V. Khotkevich, S. V. Morozov, A. K. Geim, Two-Dimensional Atomic Crystals, Proc. Natl. Acad. Sci. USA 102 (30)(2005) 10451-10453.

DOI: 10.1073/pnas.0502848102

Google Scholar

[13] H. Li, Z. Y. Yin, Q. Y. He, H. Li, X. Huang, G. Lu, D. W. H. Fam, A. I. Y. Tok, Q. Zhang, H. Zhang, Fabrication of single and Multilayer MoS2 Film-Based Field-Effect Transistors for Sensing NO at Room Temperature, small 8 (2012) 63-67.

DOI: 10.1002/smll.201101016

Google Scholar

[14] C. Zhu, Z. Zeng, J. Li, F. Li, C. Fan, H. Zhang, Single-Layer MoS2-Based Nanoprobes for Homogeneous Detection of Biomolecules, J. Am. Chem. Soc. 135 (2013) 5998-6001.

DOI: 10.1021/ja4019572

Google Scholar

[15] S. Bertolazzi, D. Krasnozhon, A. Kis, Nonvolatile Memory Cells Based on MoS2/Graphene Heterostructures, ACS Nano 7 (2013) 3246-3252.

DOI: 10.1021/nn3059136

Google Scholar

[16] E. Gourmelon, O. Lignier, H. Hadouda, G. Couturier, J. C. Bernède, J. Tedd, J. Pouzet, J. Salardenne, MS2 (M=W, Mo) Photosensitive Thin Films for Solar Cells, Sol Energy Mater. Sol Cells 46 (1997) 115-121.

DOI: 10.1016/s0927-0248(96)00096-7

Google Scholar

[17] M. Shanmugam, T. Bansal, C. A. Durcan, B. Yu, Molybdenum Disulphide/titanium Dioxide Nanocomposite-poly 3-hexylthiojhene Bulk Heterojunction Solar Cell, Appl. Phys. Lett. 100 (153901) (2012).

DOI: 10.1063/1.3703602

Google Scholar

[18] Z. Y. Yin, H. Li, H. Li, L. Jiang, Y. M. Shi, Y. H. Sun, G. Lu, Q. Zhang, X. D. Chen, H. Zhang, Single-Layer MoS2 Phototransistors, ACS Nano 6 (2012) 74-80.

DOI: 10.1021/nn2024557

Google Scholar

[19] H. S. Lee, S. W. Min, Y. G. Chang, M. K. Park, T. Nam, H. Kim, J. H. Kim, S. Ryu, S. Im, MoS2 Nanosheet Phototransistors with Tickness-Modulated Optical Energy Gap Nano Lett. 12 (2012) 3695-3700.

DOI: 10.1021/nl301485q

Google Scholar

[20] O. Lopez-Sanchez, D. Lembke, M. Kayci, S. Radenovic, A. Kis, Ultrasensitve Photodetectors Based on Monolayer MoS2, Nature Nanotechnology 8 (2013) 497-501.

DOI: 10.1038/nnano.2013.100

Google Scholar

[21] Q. He, Z. Zeng, Z. Yin, H. Li, S. Wu, X. Huang, H. Zhang, Fabrication of Flexible MoS2 Thin-Film Transistor Arrays for Practical Gas-Sensing Applications, small 8 (19) (2012) 2994-2999.

DOI: 10.1002/smll.201201224

Google Scholar

[22] H. Wang, L. Yu, Y. -H. Lee, Y. Shi, A. Hsu, M. L. Chin, L. -J. Li, M. Dubey, J. Kong, T. Palacios, Integrated Circuits Based on Bilayer MoS2 Transistors, Nano Lett. 12 (9) (2012) 4674-4680.

DOI: 10.1021/nl302015v

Google Scholar

[23] D. Frank, Y. Taur, H. -S. Wong, Generalized Scale Length for Two-Dimensional Effects in MOSFETs. IEEE Electron Device Lett. 19 (1998) 385-387.

DOI: 10.1109/55.720194

Google Scholar

[24] L. Liu, S.B. Kumar, Y. Ouyang, J. Guo, Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors. IEEE Trans. Electron Devices. 58 (2011) 3042-3047.

DOI: 10.1109/ted.2011.2159221

Google Scholar

[25] Y. Yoon, K. Ganapathi, S. Salahuddin, How Good Can Monolayer MoS2 Transistors Be?, Nano Lett. 11 (2011) 3768-3773.

DOI: 10.1021/nl2018178

Google Scholar