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Ferromagnetism and Ferromagnetic Resonance in Mn Implanted Si and GaAs

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Abstract:

Ferromagnetism persisting above 375 K and anisotropic ferromagnetic resonance (FMR) spectra have been detected for the first time in Si co-implanted with Mn and As and annealed under appropriate conditions. For comparison, semi-insulating GaAs samples have been implanted with the same ions and subsequently annealed. They also exhibit ferromagnetism with a Curie temperature well in excess of 375 K. High-resolution transmission electron microscopy (TEM) performed on the samples with the best magnetic characteristics has shown the presence of nanoclusters due to the segregation of the implanted species in both Si and GaAs. The angular dependence of the FMR spectra also reveals the existence of magnetic clusters with the hard magnetization axis aligned along the four equivalent <111> crystal axes. The spectra are very similar in Si and GaAs, indicating that the clusters in both materials probably consist of hexagonal MnAs.

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Advanced Materials Forum III View Preview

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Periodical:

Materials Science Forum (Volumes 514-516)

Pages:

280-283

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.514-516.280

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Online since:

May 2006

Authors:

Nikolai A. Sobolev, Marcio A. Oliveira, Vitor S. Amaral, Armando Neves, M. Celeste Carmo, Werner Wesch, Oliver Picht, Elke Wendler, Ute Kaiser, J. Heinrich

Keywords:

Ferromagnetic Cluster, Ferromagnetic Resonance (FMR), Semiconductor

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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