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Role of Hydrogen Plasma on the Electrical and Optical Properties of Indium Zinc Transparent Conductive Oxide

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Abstract:

In this work we studied the influence of the power density of hydrogen plasma on electrical and optical properties (Hall mobility, free carrier concentration, sheet resistance, optical transmittance and a.c. impedance) of indium zinc oxide films, aiming to determine their chemical stability. This is an important factor for the optimization of amorphous/nanocrystalline p-i-n hydrogenated silicon (a/nc-Si:H) solar cells, since they should remain chemically highly stable during the p layer deposition. To perform this work the transparent conductive oxide was exposed to hydrogen plasma at substrate temperature of 473 K, 87 Pa of pressure and 20 sccm of hydrogen flow. The results achieved show that IZO films were reduced for all plasma conditions used, which leads mainly to a decrease on films transmittance. For the lowest power density used in the first minute of plasma exposition the transmittance of the IZO films decreases about 29%.

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Advanced Materials Forum III View Preview

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Periodical:

Materials Science Forum (Volumes 514-516)

Pages:

63-67

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.514-516.63

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Online since:

May 2006

Authors:

Leandro Raniero, Alexandra Gonçalves, Ana Pimentel, Shibin Zhang, Isabel Ferreira, Paula M. Vilarinho, Elvira Fortunato, Rodrigo Martins

Keywords:

Hydrogen Plasma Treatment, Solar Cell, Transparent Conducting Oxide (TCO)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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References

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