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Annealing Effects on GaN/ZnO/Si Structures Prepared by RF Magnetron Sputtering

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Abstract:

This study shows the effect of thermal annealing on GaN/ZnO/Si structures prepared by rf magnetron sputtering. Thermal annealing tended to induce a different crystalline orientation from the c-axis orientation observed with as-deposited films. The sample annealed at 900 oC under excitation at 325 nm showed two emission bands centered at approximately 380 and 550 nm.

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Periodical:

Materials Science Forum (Volume 518)

Pages:

137-142

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.518.137

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Online since:

July 2006

Authors:

Hyoun Woo Kim, S.H. Shim, C. Lee

Keywords:

Annealing, Gallium Nitride (GaN), Structural Property

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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