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Analysis of SiO2 Thin Film Deposited by Reactive Sputtering

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Abstract:

SiO2 layers were deposited by reactive d.c ion sputtering (using 1keV Ar+ ion gun) from a high purity silicon target in an oxygen ambient. The base pressure in the deposition chamber was 4.7·10-9mbar, and the substrate temperature was held at 550 °C. The argon partial pressure during ion gun operation was 1·10-3mbar. Structural characterization of the films was performed by Rutherford backscattering spectrometry (RBS analysis), electron microprobe analysis, X-ray diffraction (XRD analysis) and Raman spectroscopy. Reactive sputtering proved to be efficient for the deposition of silica at an oxygen partial pressure of 2·10-4mbar and an electrical current on the target of 5.5mA.

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Periodical:

Materials Science Forum (Volume 518)

Pages:

149-154

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.518.149

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Online since:

July 2006

Authors:

I. Radović, Yves Serruys, Yves Limoge, Olivier Jaoul, N.Ž Romčević, S. Poissonnet, N. Bibić

Keywords:

Electron Microprobe Analysis, Raman Spectroscopy, RBS Analysis, Reactive Sputtering, SiO2, Thin Film, X-Ray Diffraction (XRD)

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© 2006 Trans Tech Publications Ltd. All Rights Reserved

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