Paper Titles
Development of Ultra High Sensitivity UV Silicon Carbide Detectors
p.1461
Silicon Carbide Power Diodes as Radiation Detectors
p.1465
Minimum Ionizing Particle Detector Based on p+n Junction SiC Diode
p.1469
Radiation Hard Devices Based on SiC
p.1473
The Limit of SiC Detector Energy Resolution in Ion Spectometry
p.1477
Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC
p.1483
Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
p.1489
Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition
p.1493
The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates
p.1497

The Limit of SiC Detector Energy Resolution in Ion Spectometry

Article Preview

Abstract:

A full modeling of deceleration of α-particles in SiC is carried out using a Monte-Carlo method. The distribution of energy losses in nuclear elastic collisions is calculated. The spectrum has a characteristic asymmetric form and the line width at half peak maximum is 4.62 keV. The final form of a spectral line is obtained by convolution with a Gaussian peak, and including the contribution of ionization fluctuations and noise. The resulting value of the line width was 8.75 keV (at a noise dispersion of detector and equipment of 1.7 keV). The resolution of detectors reached in practice is twice the lowest calculated value. It is shown that charge losses during transport of nonequilibrium carriers through the volume of the detector are insignificant, while a resolution divergence may result from a non-optimized “entrance window”.

You might also be interested in these eBooks
Silicon Carbide and Related Materials 2005 View Preview

Info:

Periodical:

Materials Science Forum (Volumes 527-529)

Pages:

1477-1480

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.527-529.1477

Citation:

Cite this paper

Online since:

October 2006

Authors:

Rositza Yakimova, Alexander A. Lebedev, Alexander M. Ivanov, Nikita B. Strokan, Mikael Syväjärvi

Keywords:

Charge Losses, Detector, Energy Resolution, Ionization Fluctuation

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2006 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

References

[1] A.A. Lebedev, N.B. Strokan, A.M. Ivanov, D.V. Davydov, N.S. Savkina, E.V. Bogdanova, A.N. Kuznetsov and R. Yakimova: Appl. Phys. Lett. Vol. 39 (2001), p.4447.

DOI: 10.1063/1.1428765

Google Scholar

[2] N.B. Strokan, A.M. Ivanov, N.S. Savkina, A.M. Strel'chuk, A.A. Lebedev, M. Syväjärvi and R. Yakimova: J. Appl. Phys. Vol. 93 (2003), p.5714.

Google Scholar

[3] A. Ivanov, E. Kalinina, G. Kholuyanov, G. Onushkin, N. Strokan, A. Konstantinov, А. Hallen and A. Kuznetsov: Mater. Sci. Forum, Vols. 483-485 (2005), p.1029.

DOI: 10.4028/www.scientific.net/msf.483-485.1029

Google Scholar

[4] G. Bertuccio, S. Binetti, S. Caccia, R. Casiraghi, A. Castaldini, A. Cavallini, C. Lanzieri, A. LeDonne, F. Nava, S. Pizzini, L. Rigutti, G. Verzellesi and E. Vittone: Mater. Sci. Forum, Vols. 483-485 (2005), p.1015.

DOI: 10.4028/www.scientific.net/msf.483-485.1015

Google Scholar

[5] I.N. Il'yashenko and N. B. Strokan: Technical Physics Letters Vol. 22 (1996), p.599.

Google Scholar

[6] J. Lindhard and V. Nielsen: Phys. Lett. Vol. 2, (1962), p.209.

Google Scholar

[7] U. Fano: Phys. Rev., Vol. 72 (1947), p.26.

Google Scholar

[8] Ion Implantation. Science and Technology, ed. by J.F. Ziegler, Acad. Press. Inc. (1984), p.635.

Google Scholar

[9] E.L. Haines and A.B. Whitehead: Rev. Sci. Instr. Vol. 37 (1966), p.190.

Google Scholar

[10] N.B. Strokan: Technical Physics Letters Vol. 24 (1998), p.186.

Google Scholar