Paper Titles
Quality Aspects for the Production of SiC Bulk Crystals
p.3
An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
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Growth and Characterization of 13C Enriched 4H-SiC for Fundamental Materials Studies
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Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals
p.17
Growth Induced Stacking Fault Formation in 4H-SiC
p.21
Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
p.25
Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
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Growth and Electrical Characterization of 4H-SiC Epilayers
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Growth of SiC from a Liquid Phase at Low Temperature
p.41

Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals

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Abstract:

New results on bulk growth of 6H-SiC crystals along the [01-15] direction are presented. The aim of our work is to improve the quality of the crystal grown by classical PVT method by employing alternative growth directions, other than conventional [0001]. Using a specially designed graphite crucible, crystals with an expansion angle of 30 degrees and diameters up to 40 mm have been grown. No polycrystalline rim develops at the contact with the graphite wall. Concerning specific defect content in the [01-15]-oriented crystals, they appear completely free of micropipes and screw or threading edge ([0001]-oriented) dislocations. The [01-15] crystal relaxes adopting a network of in-plane (0001) dislocations. They are not uniformly distributed reaching the maximum density of about 106 cm-2.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

17-20

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.17

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Online since:

September 2007

Authors:

Octavian Filip, Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker

Keywords:

Alternative Growth Direction, Defect

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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