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Initial Growth in 3C-SiC Sublimation Epitaxy on 6H-SiC
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Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis
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Mechanism of Orientation Selection for the Growth Of (111) Twin Boundary Free 3C-SiC Single Crystals on Hexagonal Basis

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Abstract:

The development of 3C-SiC crystals from <0001> oriented hexagonal seed has always suffered from the systematic twinning which appears during the nucleation step of the layer. Using the continuous feed – Physical Vapour Transport (CF-PVT) growth process, we succeeded in growing single domain 3C-SiC crystals. To explain that, we propose in this work, a model based on the interaction between the lateral expansion anisotropy of 3C-SiC nuclei and the step flow growth front. Depending on the step edges direction, we can obtain one 3C orientation developing simultaneously with the vanishing of the other one. This model is confirmed by cross sectional HRTEM observation of the α-β interface.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

199-202

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.199

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Online since:

September 2007

Authors:

Laurence Latu-Romain, Didier Chaussende, L. Rapenne, Michel Pons, Roland Madar

Keywords:

3C-SiC, DPB, Sublimation

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] D. Chaussende, M. Ucar, L. Auvray, F. Baillet, M. Pons, R. Madar: Crystal Growth & Design Vol. 5, (2005), p.1539.

DOI: 10.1021/cg050009i

Google Scholar

[2] H. S. Kong, B. L. Jiang, J. T. Glass, G. A. Rozgonyi, K. L. More, Journal of Applied Physics Vol. 63 (1988), p.2645.

Google Scholar

[3] P. G. Neudeck, J. A. Powell: in Silicon Carbide, Springer, (2004), p.179.

Google Scholar

[4] T. Kimoto, A. Itoh, H. Matsunami, Physica Status Solidi B: Basic Research Vol. 202, (1997), p.247.

Google Scholar

[5] Y. M. Tairov, V. F. Tsvetkov, S. K. Lilov, G. K. Safaraliev: J. Crystal Growth Vol. 36 (1976), p.147.

Google Scholar

[6] W. Wulfhekel, D. Sander, S. Nitsche, F. Dulot, A. Leycuras, M. Hanbucken: Surface Science Vol. 550 (2004), p.8.

DOI: 10.1016/j.susc.2003.12.037

Google Scholar

[7] M. Soueidan, G. Ferro, J. Stoemenos, E. Polychroniadis, D. Chaussende, F. Soares, S. Juillaguet, J. Camassel: Y. Monteil, Mat. Sci. Forum Vol., (2006).

DOI: 10.4028/www.scientific.net/msf.527-529.287

Google Scholar