Growth Induced Stacking Fault Formation in 4H-SiC

D. Siche; M. Albrecht; H. J. Rost; Andreas Sendzik

doi:10.4028/www.scientific.net/MSF.556-557.21

Paper Titles

Quality Aspects for the Production of SiC Bulk Crystals
p.3

An Inserted Epitaxial Layer for SiC Single Crystal Growth by the Physical Vapor Transport Method
p.9

Growth and Characterization of ¹³C Enriched 4H-SiC for Fundamental Materials Studies
p.13

Growth and Characterization of High-Quality 6H-SiC (0115) Bulk Crystals
p.17

Growth Induced Stacking Fault Formation in 4H-SiC
p.21

Hydrogen Effect on SiC Single Crystal Prepared by the Physical Vapor Transport Method
p.25

Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
p.29

Growth and Electrical Characterization of 4H-SiC Epilayers
p.35

Growth of SiC from a Liquid Phase at Low Temperature
p.41

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Growth Induced Stacking Fault Formation in 4H-SiC

Growth Induced Stacking Fault Formation in 4H-SiC

Abstract:

C-plane substrates with off-orientation to <1120 > may stabilize the grown polytype, but the stacking fault density (SFD) increases from zero in the on-axis sample to 4500 cm-1 (7.7° off). The SF form preferentially at the seed-crystal-interface by a kinetically induced rearrangement of surface ad-atoms on m-facets. Most SF start in bundles with an average distance of 100 .m, which are subdivided in smaller bundles with 8 .m distance. They start preferentially from the upper corner of the vertical non-polar plane of bunched steps, which may be composed of small pyramids with m-facet surfaces. The dislocation density could decrease with increasing SFD by a pinning mechanism.