4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

Jawad ul Hassan; Peder Bergman; Anne Henry; Henrik Pedersen; Patrick J. McNally; Erik Janzén

doi:10.4028/www.scientific.net/MSF.556-557.53

Paper Titles

Effect of Growth Conditions on Cubic Silicon Carbide Crystals Grown from Silicon Solution
p.29

Growth and Electrical Characterization of 4H-SiC Epilayers
p.35

Growth of SiC from a Liquid Phase at Low Temperature
p.41

Thick Epilayer for Power Devices
p.47

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
p.53

A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
p.57

Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
p.61

Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
p.65

Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
p.69

HomeMaterials Science ForumMaterials Science Forum Vols. 556-5574H-SiC Epitaxial Layers Grown on On-Axis Si-Face...

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate

Abstract:

We report on the growth of 4H-SiC epitaxial layer on Si-face polished nominally on-axis 2” full wafer, using Hot-Wall CVD epitaxy. The polytype stability has been maintained over the larger part of the wafer, but 3C inclusions have not been possible to avoid. Special attention has given to the mechanism of generation and propagation of 3C polytype in 4H-SiC epilayer. Different optical and structural techniques were used to characterize the material and to understand the growth mechanisms. It was found that all 3C inclusions were generated at the interface between the substrate and the epitaxial layer, and no 3C inclusions were initiated at later stages of the growth.