Paper Titles
4H-SiC Metal-Oxide-Semiconductor (MOS) Capacitors Fabricated by Oxidation in a Tungsten Lamp Furnace in Combination with a Microwave Plasma and Subsequent Deposition of Al2O3
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A Comparative Study of Surface Passivation on SiC BJTs with High Current Gain
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Acceleration Factors in Acceleration Life Test of Thermal Oxides on 4H-SiC Wafers
p.635
Characterization of MOS Capacitors Fabricated on n-type 4H-SiC Implanted with Nitrogen at High Dose
p.639
Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)
p.643
Electrical Properties of Metal-Oxide-Semiconductor (MOS) Structures on 4H-SiC(0001) Formed by Oxidizing Pre-Deposited SixNy
p.647
Fabrication of MOS Capacitors by Wet Oxidation of p-Type 4H-SiC Preamorphized by Nitrogen Ion Implantation
p.651
Growth and Properties of Gadolinium Oxide Dielectric Layers on Silicon Carbide for High-K Application
p.655
Interface Properties of SiO2/4H-SiC(0001) with Large Off-Angles Formed by N2O Oxidation
p.659

Electrical Properties of Atomic-Layer-Deposited La2O3/Thermal-Nitrided SiO2 Stacking Dielectric on 4H-SiC(0001)

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Abstract:

We have investigated the electrical properties of metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited La2O3, thermal-nitrided SiO2, and atomic-layer-deposited La2O3/thermal-nitrided SiO2 on n-type 4H-SiC. A significant reduction in leakage current density has been observed in La2O3 structure when a 6-nm thick thermal nitrided SiO2 has been sandwiched between the La2O3 and SiC. However, this reduction is still considered high if compared to sample having thermal-nitrided SiO2 alone. The reasons for this have been explained in this paper.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

643-646

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.643

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Cite this paper

Online since:

September 2007

Authors:

Jeong Hyun Moon, Kuan Yew Cheong, Da Il Eom, Ho Keun Song, Jeong Hyuk Yim, Jong Ho Lee, Hoon Joo Na, Wook Bahng, Nam Kyun Kim, Hyeong Joon Kim

Keywords:

4H-SiC, Atomic Layer Deposition ALD, Lanthanum Oxide (La2O3), Thermal Nitrided SiO2

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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