Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates

Mike F. MacMillan; Mark J. Loboda; Jian Wei Wan; Gil Yong Chung; E.P. Carlson; Michael J. Spaulding; D. Deese

doi:10.4028/www.scientific.net/MSF.556-557.69

Paper Titles

4H-SiC Epitaxial Layers Grown on On-Axis Si-Face Substrate
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A Designed Experiment Approach to Improvement and Understanding of the SiC Epitaxial Growth Process
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Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
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Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
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Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
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CVD of 6H-SiC on Non-Basal Quasi Polar Faces
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Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
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Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
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Effect of Additional Silane on In Situ H₂ Etching prior to 4H-SiC Homoepitaxial Growth
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HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Comparison of Chlorine Based In Situ Etching of 4H...

Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates

Abstract:

Gas phase etching of 4H SiC n+ substrates was performed utilizing chlorine containing etch chemistries in a hot wall CVD system. Carbon and silicon vapor were added to explore selective etching reactions on the wafer surface. The impact of the etch on the bare wafer surface as a function of temperature and etch chemistry is investigated. Selection of the etch chemistry and temperature are critical to ensure a smooth etched surface on which to begin epitaxial deposition. Etching also influences defect propagation from the substrate into the epitaxial layer. The results show etch chemistry reactions will influence the conversion of micropipes in the epi buffer layer.