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Low Specific Contact Resistance to 3C-SiC Grown on (100) Si Substrates

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Abstract:

In this work, ohmic contacts, formed by 100nm Ni layer RTA annealed or not, were investigated on 3C-SiC epilayers exhibiting different nitrogen doping levels. The epilayers were grown on (100) silicon. Doping level (N) and eventual dopant contamination (Al) were analyzed by C-V and/or SIMS. The specific contact resistance was determined by using Transmission Line Model (TLM) patterns for each condition (doping and annealing). Our results clearly evidence that very low specific contact resistance (~10-51.cm²) is obtained on highly doped 3C-SiC epilayers, enlightening the interest of both material and Ni contacts for future devices fabrication.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

721-724

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.721

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Online since:

September 2007

Authors:

Anne Elisabeth Bazin, Thierry Chassagne, Jean François Michaud, André Leycuras, Marc Portail, Marcin Zielinski, Emmanuel Collard, Daniel Alquier

Keywords:

3C-SiC, Nickel Ni, Ohmic Contact, Specific Contact Resistance

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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