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CVD of 6H-SiC on Non-Basal Quasi Polar Faces

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Abstract:

Crystal growth of 6H-SiC in two non-basal directions is reported. The two explored surfaces are the {1-103} plane, named qC-face, and the {1-10-3} plane, named qSi-face. The asgrown bulk surfaces exhibit a smooth structure with a small ridging effect originating from the miscut of the seed crystals. Layers, epitaxially grown on the chemically-mechanically polished qCface, nicely replicate the original crystal structure and show no sign of polytype mixing. Lowtemperature photoluminescence measurements collected on the epilayers exhibit near bandedge spectral characteristics indicative of good quality 6H-SiC.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

73-76

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.73

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Online since:

September 2007

Authors:

Y. Shishkin, Shailaja P. Rao, Olof Kordina, I. Agafonov, Andrei A. Maltsev, Jawad ul Hassan, Anne Henry, Catherine Moisson, Stephen E. Saddow

Keywords:

Chemical Vapor Deposition (CVD), Epitaxy, Growth, LTPL

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© 2007 Trans Tech Publications Ltd. All Rights Reserved

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[9] Information on http: / www. novasic. com Fig. 3. Schematic projection view of a 6H-SiC crystal lattice as seen from a �1-120! direction. Solid dots denote carbon atoms, open dots silicon atoms. The zigzagged lines connecting silicon atoms and carbon atoms make up the qSi- and qC-faces, respectively, of the (1-103) quasi-polar non-basal plane. Dashed lines indicate the basal plane.

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