Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Joseph J. Sumakeris; Brett A. Hull; Michael  J. O'Loughlin; Marek Skowronski; Vijay Balakrishna

doi:10.4028/www.scientific.net/MSF.556-557.77

Paper Titles

Analysis of SiC CVD Growth in a Horizontal Hot-Wall Reactor by Experiment and 3D Modelling
p.61

Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
p.65

Comparison of Chlorine Based In Situ Etching of 4H SiC Substrates
p.69

CVD of 6H-SiC on Non-Basal Quasi Polar Faces
p.73

Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
p.77

Development of High Growth Rate SiC Epi-Reactor with Controlled Thermal Gradient
p.81

Effect of Additional Silane on In Situ H₂ Etching prior to 4H-SiC Homoepitaxial Growth
p.85

Epitaxial Growth of 4H-SiC on (000-1) C-Face Substrates by Cold-Wall and Hot-Wall Chemical Vapor Deposition
p.89

Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route
p.93

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Developing an Effective and Robust Process for...

Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices

Abstract:

We detail a comprehensive approach to preparing epiwafers for bipolar SiC power devices which entails etching the substrate, growing a semi-sacrificial basal plane dislocation (BPD) conversion epilayer, polishing away a portion of that conversion epilayer to recover a smooth surface and then growing the device epilayers following specific methods to prevent the reintroduction of BPDs. With our best processing, we achieve a BPD density of < 10 cm-2 and an extended defect density of < 1.5 cm-2. Specifics of low BPD processing and particular concerns and metrics will be discussed in regard to process optimization and simplification.