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Ferroelectric Properties of Sol-Gel Derived Ca1-xSrxBi4Ti4O15 Thin Films

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Abstract:

Ca1-xSrxBi4Ti4O15 thin films were fabricated by sol-gel method on Pt(100)/Ti/SiO2/Si substrates. Influence of Sr content on the microstructure and ferroelectric properties of Ca1-xSrxBi4Ti4O15 thin films were systematically studied. The results indicate that Ca0.4Sr0.6Bi4Ti4O15 thin film has better ferroelectric properties with remanent polarization (2Pr) of 29.1+C/cm2, coercive field (2Ec) of 220 kV/cm. Furthermore, the film has good fatigue resistance. The better ferroelectric properties of Ca0.4Sr0.6Bi4Ti4O15 thin film originate from the relatively high concentration of a-axis oriented grains.

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Periodical:

Key Engineering Materials (Volumes 368-372)

Pages:

100-102

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.368-372.100

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Online since:

February 2008

Authors:

Su Hua Fan, Jing Xu, Guang Da Hu, Bo He, Feng Qing Zhang

Keywords:

Ca1-xSrxBi4Ti4O15 Thin Films, Ferroelectric Property, Sol-Gel (SG)

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] T. Takeuchi, T. Tani, Y. Saito: Jpn. J. Appl. Phys. Vol. 39 (2000), p.5577.

Google Scholar

[2] H. Uchida, K. Sakurai, I. Okada, et al.: Jpn. J. Appl. Phys. Vol. 42 (2003), p.5990.

Google Scholar

[3] L.Y. Zheng, G.R. Li, W.Z. Zhang, , et al.: Mat. Sci. Eng. B-Solid. Vol. B99 (2003), p.363.

Google Scholar

[4] D.S. Fu, K. Suzuki, K. Kato: Appl. Phy. Lett. Vol. 85 (2004), p.3519.

Google Scholar

[5] F. Arai, K. Motoo, T. Fukuda: Appl. Phy. Lett. Vol. 85 (2004), p.4217.

Google Scholar

[6] M.H. Sim, J.M. Xue, J. Wang: Mater. Lett. Vol. 58 (2004), p. (2032).

Google Scholar

[7] L.V. Korzunova: Ferroelectrics. Vol. 134(1992), p.175.

Google Scholar

[8] G.D. Hu: Jpn. J. Appl. Phys. Vol. 100(2006), p.096109.

Google Scholar

[9] S.J. Yeom, W.S. Yang, N.K. Kim, et al.: Jpn. J. Appl. Phys. Vol. 42 (2003), p. L182.

Google Scholar

[10] S.O. Ryu, W.J. Lee, W.C. Lee, et al.: Jpn. Appl. Phys. Vol. 42 (2003), p.1665.

Google Scholar

[11] H. Uchida, H. Yshikawa, I. Okada, et al.: Appl. Phys. Letter. Vol. 81 (2002), p.2229.

Google Scholar

[12] W.L. Warren, D. Dimos, R.M. Waser: MRS. Bull. Vol. 21 (1996).

Google Scholar