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Ultraviolet Photoluminescence on Nano-Crystalline 6H-SiC

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Abstract:

SiC films were prepared by HFCVD technique on (111) Si substrate. The composition and the structure of the films were investigated using EDX, XRD and transient fluorescence. Results indicated the films deposited were nanocrystalline and the calculation of the grain size gave a further confirmation. PL measurement of the present films showed that there existed a strong ultraviolet emission at room temperature.

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Periodical:

Key Engineering Materials (Volumes 368-372)

Pages:

319-321

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.368-372.319

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Online since:

February 2008

Authors:

Hui Wang, Tong Wei Li, Zheng Xin Tang, Jing Han You, Xiang Ru Liu, Qing Dong Chen

Keywords:

HFCVD, Nanocrystalline, Silicon Carbide (SiC), Ultraviolet Emission

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© 2008 Trans Tech Publications Ltd. All Rights Reserved

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