Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films

S. Chen; A.H. Cai; X.A. Mei; Chong Qing Huang; W.K. An; Min Chen

doi:10.4028/www.scientific.net/KEM.368-372.91

Paper Titles

Nano-Precipitation in SrTiO₃-Based Functional Ceramics
p.78

Electrical Characterization and Microstructures of Tb-Doped Bi₄Ti₃O₁₂ Thin Films
p.82

Cation Distribution and Structural Instability in Pr-Doped Bi₄Ti₃O₁₂
p.85

Electrical Characteristics and Microstructures of (Gd, Dy)-Doped Bi₄Ti₃O₁₂ Ceramics
p.88

Electrical Characteristics and Microstructures of Ce-Doped Bi₄Ti₃O₁₂ Films
p.91

Effect of Tb Substitution on Electrical Characteristics and Microstructures of Bismuth Titanate Ceramics
p.95

Preparation and Dielectric Properties of the Layered Perovskite Sr₄Bi₄Ti₇O₂₄ Ferroelectric Ceramics
p.98

Ferroelectric Properties of Sol-Gel Derived Ca_1-xSr_xBi₄Ti₄O₁₅ Thin Films
p.100

Synthesis of Nanocrystalline 0.94Bi_0.5Na_0.5TiO₃-0.06BaTiO₃ Powder by a Citrate Method
p.103

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Electrical Characteristics and Microstructures of Ce-Doped Bi₄Ti₃O₁₂ Films

Abstract:

Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and the ferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ec of the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after 3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film.