Paper Titles

Optical Isothermal Transient Spectroscopy: Application to the Boron Implantation in GaAs
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Scanning Transmission Electron Beam Induced Current in Polycrystalline Silicon
p.545

On the Formation of ¹¹¹In-Donor Atom Pairs in Silicon as Observed by PAC
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Acceptor-Donor-Interactions in Silicon Studied by the Pac-Method
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Hydrogen Behavior and Hydrogen-Related Defects in Single Crystal Silicon
p.563

Hydrogen Diffusion and Hydrogen-Dopant Reactions in Crystalline Silicon
p.573

Photoluminescence Detection of the Shallow Impurity Neutralization in GaAs
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Selective Hydrogen Passivation of Oxygen-Related Thermal-Donor Clusters in Silicon
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Correlation between Hydrogen Diffusion and Donor Neutralization in Hydrogenated n-GaAs: Si
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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Hydrogen Behavior and Hydrogen-Related Defects in...

Hydrogen Behavior and Hydrogen-Related Defects in Single Crystal Silicon

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

563-571

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.563

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Online since:

January 1986

Authors:

Guo-Gang Qin, Yong-Chang Du, J. Wu, Xiu-Chen Yao

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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