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HomeMaterials Science ForumMaterials Science Forum Vols. 10-12Dislocation Substructures and Plasticity of GaAs...

Dislocation Substructures and Plasticity of GaAs below 400°C as a Function of Doping

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Defects in Semiconductors 14

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Periodical:

Materials Science Forum (Volumes 10-12)

Pages:

781-786

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.10-12.781

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Online since:

January 1986

Authors:

Philippe Boivin, Jacques Rabier, H. Garem

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© 1986 Trans Tech Publications Ltd. All Rights Reserved

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