Paper Titles

Reactive Interdiffusion
p.15

Phase Stability during Growth of Compound Layers
p.31

Silicides Thin Films Formed by Metal/Silicon Reaction: Role of Diffusion
p.39

A Linear Phase Growth with Non-Equilibrium Vacancies
p.55

Modellization of the Growth of Three Intermediate Phases
p.59

Spectroscopic Studies of Phase Formation and Diffusion Processes at Interfaces
p.71

Experimental Investigation of Reactive Phase Formation at Interfaces by Ion Beam Techniques
p.91

TEM and In Situ HREM for Studying Metal-Semiconductor Interfacial Reactions
p.111

Simulations of Growth
p.121

HomeMaterials Science ForumMaterials Science Forum Vols. 155-156Modellization of the Growth of Three Intermediate...

Modellization of the Growth of Three Intermediate Phases

Article Preview

Abstract:

You might also be interested in these eBooks

Reactive Phase Formation at Interfaces and Diffusion Processes

Info:

Periodical:

Materials Science Forum (Volumes 155-156)

Pages:

59-70

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.155-156.59

Citation:

Cite this paper

Online since:

May 1994

Authors:

S.-L. Zhang, François M. d'Heurle

Keywords:

Intermetallic Compound (IMC), Linear-Parabolic Kinetics, Multiple Phase Growth, Reactive Diffusion

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1994 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: