Paper Titles

Impurity Centers Associated with Magnesium Introduced in Silicon by Fast Neutron Transmutation Reactions
p.163

EPR and IR Absorption of Defects in Isotopically Enriched Germanium
p.167

NMR Study of Impurity Electronic Structure and Dynamics
p.173

Native Point Defect Equilibria and the Phase Extent of Gallium Arsenide
p.179

The Role of Point Defects in Non-Stoichiometric III-V Compounds
p.189

Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR
p.195

Bound Exciton Spectra in Semi-Insulating GaAs
p.201

Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors
p.207

Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide
p.213

HomeMaterials Science ForumMaterials Science Forum Vols. 196-201The Role of Point Defects in Non-Stoichiometric...

The Role of Point Defects in Non-Stoichiometric III-V Compounds

Article Preview

Abstract:

You might also be interested in these eBooks

Defects in Semiconductors 18

Info:

Periodical:

Materials Science Forum (Volumes 196-201)

Pages:

189-194

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.196-201.189

Citation:

Cite this paper

Online since:

November 1995

Authors:

A. Prasad, X. Liu, H. Fujioka, N.D. Jäger, Johji Nishio, Eicke R. Weber

Keywords:

Antisite Defects, Low Temperature Grown GaAs, Magnetic Circular Dichroism, Non-Stoichiometry

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1995 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: