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HomeMaterials Science ForumMaterials Science Forum Vols. 255-257Interfacial Mixing in Al-Ge Thin Film Junction...

Interfacial Mixing in Al-Ge Thin Film Junction Studied by Variable Low Energy Positron Beam

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Periodical:

Materials Science Forum (Volumes 255-257)

Pages:

692-694

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.255-257.692

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Online since:

September 1997

Authors:

G. Venugopal Rao, G. Raghavan, G. Amarendra, A.K. Tyagi, B. Viswanathan

Keywords:

Al-Ge, Interfacial Mixing, Positron Beams, SIMS, Thin Film

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© 1997 Trans Tech Publications Ltd. All Rights Reserved

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