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Deposition of Copper Thin Films on Titanium Nitride Layer Prepared by Flow Modulation CVD Technology

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Abstract:

Copper (Cu) thin films have been deposited onto titanium nitride (TiN) layer which was previously prepared by flow modulation chemical vapor deposition (FMCVD technology. The diffusion barrier properties of the TiN layer to Cu have been studied depending upon the post-annealing and the sample preparation conditions of the TiN layer. The Cu deposition has performed by RF magnetron sputtering with 5N target in the high vacuum ambient. The FMCVD process has carried out in a single CVD chamber by switching TiCl4 flow to the argon flow cyclically, which creates sequential deposition of TiN layer and chlorine reduction process. The higher flow modulation cycle and Ar purge time during the TiN layer growth have been observed to provide the better diffusion barrier property in Auger depth profile and X-ray diffraction analysis.

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Periodical:

Materials Science Forum (Volumes 449-452)

Pages:

457-460

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.449-452.457

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Online since:

March 2004

Authors:

Nam Ihn Cho, Min Chul Kim, Kyung Hwa Rim, Ho Jung Chang, Keeyoung Jun, Yukihiro Shimogaki

Keywords:

Copper (Cu), Flow Modulation Chemical Vapor Deposition FMCVD, Interconnection Processing, Sputtering, Titanium Nitride TiN

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© 2004 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] S.W. Lee, F.G. Shi, and S.D. Lopatin, J. Electronic Materials Vol. 32, (2003), p.27.

Google Scholar

[2] N.I. Cho, H.G. Nam, Y. Choi, and J.S. Yang, Microelectronic Engineering Vol. 66 (2003), p.415.

Google Scholar

[3] G. Schindler, G. Steinlesberger, M. Engelhardt, and W. Steinhogl, Solid-State Electronics Vol. 47 (2003), p.1233.

Google Scholar

[4] N. I. Cho and Y. Sul, Material Sec. Eng. Vol. B72 (2000), p.184.

Google Scholar

[5] P. Mott, M. Proust, J. Torres, Y. Gobil, Y. Morand, J. Palleau, R. Pantel, and M. Juhel, Microelectronic Engineering Vol. 74 (2000), p.369.

DOI: 10.1016/s0167-9317(99)00304-4

Google Scholar

[6] K. Chen, Y. Yu, H. Mu, E.Z. Luo, B. Sundaravel, S.P. Wong, and I.H. Wilson, Surface and Coating Technology Vol. 151 (2002), p.434.

Google Scholar

[7] H. Hamamura, H. Komiyama, and Y. Shimogaki, Jpn. J. Appl. Phys. Vol. 40 (2001), p.1517.

Google Scholar