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Simulation of the MOCVD Reactor for ZnO Growth

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Abstract:

In this paper we have characterized the performance of a vertical metalorganic chemical vapor deposition (MOCVD) reactor used for deposition of ZnO thin films. The equations of the mathematical model are solved numerically using a control-volume-based finite difference method. A two-dimensional model is put forward to study the dependence of the growth rate on the inlet flow rate and susceptor temperature. The mass-fraction distribution of the reactants has been studied as a function of the position above the substrate, which shows that gas phase pre-reaction in our reactor is well confined. The simulation results are useful for the practical growth of ZnO.

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Periodical:

Materials Science Forum (Volumes 475-479)

Pages:

1833-1836

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.475-479.1833

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Online since:

January 2005

Authors:

S.M. Liu, Shu Lin Gu, Feng Qin, Su Min Zhu, Jian Dong Ye, W. Liu, X. Zhou, R. Zhang, Y. Shi, Y.D. Zheng

Keywords:

Computer Simulation, Fluent, MOCVD, Zinc Oxide (ZnO)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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References

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