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Electroluminescence from GaInAsP/InP VCSEL

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Abstract:

Long-wavelength vertical cavity surface emitting lasers (VCSELs) operating in the 1.3 µm to 1.5 µm wavelength range are considered the best candidate for the future low-cost reliable light sources in fiber communications. However, the room temperature performance of GaInAsP/InP long-wavelength InP lattice matched material system falls below the shortwavelength VCSELs. In this work we present the results of our studies concerning I-V and electroluminescence measurements on GaInAsP/InP structure with distributed Bragg reflectors. The device lased at 0.98 µm at room temperature.

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Periodical:

Materials Science Forum (Volumes 480-481)

Pages:

59-64

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.480-481.59

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Online since:

March 2005

Authors:

Asiye Ulug, Melek Tuncay Karabulut

Keywords:

Electroluminescence, GaInAsP/InP, VCSELs

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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