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Synthesis of Crystalline Carbon Nitride by Microwave Plasma Chemical Vapor Deposition

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Abstract:

Carbon nitride films were grown on Si substrates by a microwave plasma chemical vapor deposition method, using mixture of N2, CH4 and H2 as precursor. Scanning electron microscopy shows that the films consisted of a large number of hexagonal crystallites. The dimension of the largest crystallite is about 3 µm. The X-ray photoelectron spectroscopy suggests that nitrogen and carbon in the films are bonded through hybridized sp2 and sp3 configurations. The X-ray diffraction pattern indicates that the major part of the films is composed of α-, β-, pseudocubic C3N4 and graphitic C3N4. The Raman peaks match well with the calculated Raman frequencies of α- and β-C3N4, revealing the formation of the α- and β-C3N4 phase.

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Periodical:

Materials Science Forum (Volumes 480-481)

Pages:

71-76

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.480-481.71

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Online since:

March 2005

Authors:

Jin Chun Jiang, Wen Juan Cheng, Yang Zhang, He Sun Zhu, De Zhong Shen

Keywords:

Advanced Materials, C3N4 Crystallites, Carbon Nitride, Chemical Vapor Deposition (CVD)

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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